IXKK85N60C

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IXYS

MOSFET N-CH 600V 85A TO264A

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IXYS

MOSFET N-CH 600V 85A TO264A

Technical Specifications

Parameters and characteristics for this part

Specification	IXKK85N60C

Current - Continuous Drain (Id) @ 25°C	85 A
Drain to Source Voltage (Vdss)	600 V
Drive Voltage (Max Rds On, Min Rds On)	10 V
FET Type	N-Channel
Gate Charge (Qg) (Max) @ Vgs	650 nC
Mounting Type	Through Hole
Operating Temperature [Max]	150 °C
Operating Temperature [Min]	-55 °C
Package / Case	TO-264AA, TO-264-3
Rds On (Max) @ Id, Vgs	36 mOhm
Supplier Device Package	TO-264AA
Technology	MOSFET (Metal Oxide)
Vgs (Max)	20 V
Vgs(th) (Max) @ Id [Max]	4 V

Part	Gate Charge (Qg) (Max) @ Vgs	Vgs (Max)	Mounting Type	Technology	Operating Temperature [Min]	Operating Temperature [Max]	FET Type	Supplier Device Package	Drive Voltage (Max Rds On, Min Rds On)	Vgs(th) (Max) @ Id [Max]	Drain to Source Voltage (Vdss)	Current - Continuous Drain (Id) @ 25°C	Package / Case	Rds On (Max) @ Id, Vgs
IXYS IXKK85N60C	650 nC	20 V	Through Hole	MOSFET (Metal Oxide)	-55 °C	150 °C	N-Channel	TO-264AA	10 V	4 V	600 V	85 A	TO-264-3 TO-264AA	36 mOhm

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General part information

N-Channel 600 V 85A (Tc) Through Hole TO-264AA

Technical documentation and resources

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