Specification	CSD18542KTT

Current - Continuous Drain (Id) (Ta)	200 A
Drain to Source Voltage (Vdss)	60 V
Drive Voltage (Max Rds On)	4.5 V
Drive Voltage (Min Rds On)	10 V
FET Type	N-Channel
Gate Charge (Max)	57 nC, 57 nC
Input Capacitance (Ciss) (Max)	5070 pF
Mounting Type	Surface Mount
Operating Temperature (Max)	175 °C
Operating Temperature (Min)	-55 °C
Package / Case	D2PAK (2 Leads + Tab), TO-263-3, TO-263AB, D2PAK (3 Leads + Tab), TO-263AA, TO-263-4
Package Name	TO-263 (DDPAK-3)
Power Dissipation (Max)	250 W
Rds On (Max)	4 mOhm
Technology	MOSFET (Metal Oxide)
Vgs (Max)	20 V
Vgs(th) (Max)	2.2 V

CSD18542 Series

Part	Rds On (Max)	Package Name	Drain to Source Voltage (Vdss)	Power Dissipation (Max)	Technology	Current - Continuous Drain (Id) (Tc)	FET Type	Vgs(th) (Max)	Gate Charge (Max)	Drive Voltage (Min Rds On)	Drive Voltage (Max Rds On)	Operating Temperature (Min)	Operating Temperature (Max)	Package / Case	Input Capacitance (Ciss) (Max)	Mounting Type	Vgs (Max)
Texas Instruments CSD18542KTTT	4 mOhm	TO-263 (DDPAK-3)	60 V	250 W	MOSFET (Metal Oxide)	170 A	N-Channel	2.2 V	57 nC 57 nC	10 V	4.5 V	-55 °C	175 °C	D2PAK (2 Leads + Tab) D2PAK (3 Leads + Tab) TO-263-3 TO-263-4 TO-263AA TO-263AB	5070 pF	Surface Mount	20 V

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