Specification	1SS413,L3M

Capacitance	3.9 pF
Current - Average Rectified (Io)	50 mA
Current - Reverse Leakage	500 nA
Mounting Type	Surface Mount
Operating Temperature - Junction (Max)	125 °C
Package / Case	2-SMD, Flat Leads
Package Name	fSC
Speed	Any Speed, Small Signal
Speed - Fast Recovery (Maximum)	200 mA
Speed - Small Signal Current Max	200 mA, 200 mA, 200 mA
Technology	Schottky
Voltage - DC Reverse (Vr) (Max)	20 V
Voltage - Forward (Vf) (Max)	550 mV

1SS413 Series

Part	Capacitance	Operating Temperature - Junction (Max)	Technology	Mounting Type	Voltage - Forward (Vf) (Max)	Voltage - DC Reverse (Vr) (Max)	Package Name	Current - Average Rectified (Io)	Speed - Small Signal Current Max	Speed	Speed - Fast Recovery (Maximum)	Package / Case	Current - Reverse Leakage
Toshiba Semiconductor and Storage 1SS413,L3M	3.9 pF	125 °C	Schottky	Surface Mount	550 mV	20 V	fSC	50 mA	200 mA 200 mA 200 mA	Any Speed Small Signal	200 mA	2-SMD Flat Leads	500 nA

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