BSC024NE2LSATMA1

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Infineon Technologies

OPTIMOS™ N-CHANNEL POWER MOSFET 25 V ; SUPERSO8 5X6 PACKAGE; 2.4 MOHM;

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BSC024NE2LSATMA1

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Infineon Technologies

OPTIMOS™ N-CHANNEL POWER MOSFET 25 V ; SUPERSO8 5X6 PACKAGE; 2.4 MOHM;

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Specifications Pricing Series Description Documents

Technical Specifications

Parameters and characteristics for this part

Specification	BSC024NE2LSATMA1

Current - Continuous Drain (Id) @ 25°C	110 A, 25 A
Drain to Source Voltage (Vdss)	25 V
Drive Voltage (Max Rds On, Min Rds On)	10 V, 4.5 V
FET Type	N-Channel
Gate Charge (Qg) (Max) @ Vgs	23 nC
Input Capacitance (Ciss) (Max) @ Vds	1700 pF
Mounting Type	Surface Mount
Operating Temperature [Max]	150 °C
Operating Temperature [Min]	-55 °C
Package / Case	8-PowerTDFN
Power Dissipation (Max)	2.5 W, 48 W
Rds On (Max) @ Id, Vgs	2.4 mOhm
Supplier Device Package	PG-TDSON-8-5
Technology	MOSFET (Metal Oxide)
Vgs (Max)	20 V
Vgs(th) (Max) @ Id	2 V

BSC024 Series

Part	Package / Case	Gate Charge (Qg) (Max) @ Vgs	Drain to Source Voltage (Vdss)	Mounting Type	Vgs (Max)	Supplier Device Package	Drive Voltage (Max Rds On, Min Rds On)	Rds On (Max) @ Id, Vgs	FET Type	Vgs(th) (Max) @ Id	Power Dissipation (Max)	Input Capacitance (Ciss) (Max) @ Vds	Operating Temperature [Min]	Operating Temperature [Max]	Current - Continuous Drain (Id) @ 25°C	Technology
Infineon Technologies BSC024NE2LSATMA1	8-PowerTDFN	23 nC	25 V	Surface Mount	20 V	PG-TDSON-8-5	4.5 V 10 V	2.4 mOhm	N-Channel	2 V	2.5 W 48 W	1700 pF	-55 °C	150 °C	25 A 110 A	MOSFET (Metal Oxide)

Pricing

Prices provided here are for design reference only. For realtime values and availability, please visit the distributors directly

Distributor	Package	Quantity	$

Digikey	Cut Tape (CT)	1	$ 1.65
		10	$ 1.05
		100	$ 0.70
		500	$ 0.55
		1000	$ 0.51
		2000	$ 0.47
	Digi-Reel®	1	$ 1.65
		10	$ 1.05
		100	$ 0.70
		500	$ 0.55
		1000	$ 0.51
		2000	$ 0.47
	Tape & Reel (TR)	5000	$ 0.42
		10000	$ 0.42

Description

General part information

BSC024 Series

With the OptiMOS™ 25V product family, Infineon sets new standards in power density and energy efficiency for discrete power MOSFETs and system in package. Ultra low gate and output charge, together with lowest on-state resistance in small footprint packages, make OptiMOS™ 25V the best choice for the demanding requirements of voltage regulator solutions in servers, datacom and telecom applications. Available in halfbridge configuration (power stage 5x6).

Documents

Technical documentation and resources