IPA80R460CEXKSA2

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Infineon Technologies

MOSFET, N-CH, 800V, 10.8A, TO-220FP-3

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Infineon Technologies

MOSFET, N-CH, 800V, 10.8A, TO-220FP-3

Technical Specifications

Parameters and characteristics for this part

Specification	IPA80R460CEXKSA2

Current - Continuous Drain (Id) @ 25°C	10.8 A
Drain to Source Voltage (Vdss)	800 V
Drive Voltage (Max Rds On, Min Rds On)	10 V
FET Type	N-Channel
Gate Charge (Qg) (Max) @ Vgs [Max]	64 nC
Input Capacitance (Ciss) (Max) @ Vds	1600 pF
Mounting Type	Through Hole
Operating Temperature [Max]	150 °C
Operating Temperature [Min]	-40 °C
Package / Case	TO-220-3 Full Pack
Power Dissipation (Max)	34 W
Rds On (Max) @ Id, Vgs	460 mOhm
Technology	MOSFET (Metal Oxide)
Vgs (Max)	20 V
Vgs(th) (Max) @ Id	3.9 V

Part	Drain to Source Voltage (Vdss)	FET Type	Technology	Vgs(th) (Max) @ Id	Drive Voltage (Max Rds On, Min Rds On)	Operating Temperature [Max]	Operating Temperature [Min]	Power Dissipation (Max)	Gate Charge (Qg) (Max) @ Vgs [Max]	Vgs (Max)	Mounting Type	Package / Case	Input Capacitance (Ciss) (Max) @ Vds	Current - Continuous Drain (Id) @ 25°C	Rds On (Max) @ Id, Vgs
Infineon Technologies IPA80R460CEXKSA2	800 V	N-Channel	MOSFET (Metal Oxide)	3.9 V	10 V	150 °C	-40 °C	34 W	64 nC	20 V	Through Hole	TO-220-3 Full Pack	1600 pF	10.8 A	460 mOhm

Prices provided here are for design reference only. For realtime values and availability, please visit the distributors directly

General part information

N-Channel 800 V 10.8A (Ta) 34W (Tc) Through Hole PG-TO220-3-31

Technical documentation and resources