ZXGD3105N8TC
ActiveSYNCHRONOUS MOSFET CONTROLLER, 150DEGC ROHS COMPLIANT: YES
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ZXGD3105N8TC
ActiveSYNCHRONOUS MOSFET CONTROLLER, 150DEGC ROHS COMPLIANT: YES
Deep-Dive with AI
Technical Specifications
Parameters and characteristics for this part
| Specification | ZXGD3105N8TC |
|---|---|
| Channel Type | Single |
| Current - Peak Output (Source, Sink) [custom] | 9 A |
| Current - Peak Output (Source, Sink) [custom] | 4 A |
| Driven Configuration | Low-Side |
| Gate Type | N-Channel MOSFET |
| Input Type | Non-Inverting |
| Mounting Type | Surface Mount |
| Number of Drivers | 1 |
| Operating Temperature [Max] | 150 °C |
| Operating Temperature [Min] | -40 °C |
| Package / Case | 8-SOIC |
| Package / Case [x] | 0.154 in |
| Package / Case [y] | 3.9 mm |
| Rise / Fall Time (Typ) [custom] | 77 ns |
| Rise / Fall Time (Typ) [custom] | 26 ns |
| Supplier Device Package | 8-SO |
| Voltage - Supply [Max] | 25 V |
| Voltage - Supply [Min] | 4.5 V |
Pricing
Prices provided here are for design reference only. For realtime values and availability, please visit the distributors directly
| Distributor | Package | Quantity | $ | |
|---|---|---|---|---|
| Digikey | Cut Tape (CT) | 1 | $ 1.39 | |
| 10 | $ 0.88 | |||
| 25 | $ 0.74 | |||
| 100 | $ 0.58 | |||
| 250 | $ 0.51 | |||
| 500 | $ 0.46 | |||
| 1000 | $ 0.42 | |||
| Digi-Reel® | 1 | $ 1.39 | ||
| 10 | $ 0.88 | |||
| 25 | $ 0.74 | |||
| 100 | $ 0.58 | |||
| 250 | $ 0.51 | |||
| 500 | $ 0.46 | |||
| 1000 | $ 0.42 | |||
| Tape & Reel (TR) | 2500 | $ 0.30 | ||
| Newark | Each (Supplied on Cut Tape) | 1 | $ 1.15 | |
| 10 | $ 0.95 | |||
| 25 | $ 0.87 | |||
| 50 | $ 0.79 | |||
| 100 | $ 0.70 | |||
| 250 | $ 0.68 | |||
| 500 | $ 0.65 | |||
| 1000 | $ 0.60 | |||
Description
General part information
ZXGD3105N8 Series
ZXGD3105N8 synchronous controller is designed for driving a MOSFET as an ideal rectifier. This is to replace a diode for increasing the power transfer efficiency. The device is comprised of a differential amplifier detector stage and high current driver. The detector monitors the reverse voltage of the MOSFET such that if body diode conduction occurs a positive voltage is applied to the MOSFET’s Gate pin. Once the positive voltage is applied to the Gate the MOSFET switches on allowing reverse current flow. The detectors’ output voltage is then proportional to the MOSFET Drain-Source voltage and this is applied to the Gate via the driver. This action provides a rapid MOSFET turn off as Drain current decays to zero.
Documents
Technical documentation and resources