SUG80050E-GE3

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Vishay General Semiconductor - Diodes Division

MOSFET N-CH 150V 100A TO247AC

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Vishay General Semiconductor - Diodes Division

MOSFET N-CH 150V 100A TO247AC

Technical Specifications

Parameters and characteristics for this part

Specification	SUG80050E-GE3

Current - Continuous Drain (Id) @ 25°C	100 A
Drain to Source Voltage (Vdss)	150 V
Drive Voltage (Max Rds On, Min Rds On) [Max]	7.5 V
Drive Voltage (Max Rds On, Min Rds On) [Min]	10 V
FET Type	N-Channel
Gate Charge (Qg) (Max) @ Vgs	165 nC
Input Capacitance (Ciss) (Max) @ Vds [Max]	6250 pF
Mounting Type	Through Hole
Operating Temperature [Max]	175 ░C
Operating Temperature [Min]	-55 °C
Package / Case	TO-247-3
Power Dissipation (Max)	500 W
Rds On (Max) @ Id, Vgs	5.4 mOhm
Supplier Device Package	TO-247AC
Technology	MOSFET (Metal Oxide)
Vgs (Max)	20 V
Vgs(th) (Max) @ Id	4 V

Part	Gate Charge (Qg) (Max) @ Vgs	Drive Voltage (Max Rds On, Min Rds On) [Min]	Drive Voltage (Max Rds On, Min Rds On) [Max]	Power Dissipation (Max)	Package / Case	Technology	Rds On (Max) @ Id, Vgs	Operating Temperature [Min]	Operating Temperature [Max]	FET Type	Vgs (Max)	Mounting Type	Supplier Device Package	Drain to Source Voltage (Vdss)	Current - Continuous Drain (Id) @ 25°C	Vgs(th) (Max) @ Id	Input Capacitance (Ciss) (Max) @ Vds [Max]
Vishay General Semiconductor - Diodes Division SUG80050E-GE3	165 nC	10 V	7.5 V	500 W	TO-247-3	MOSFET (Metal Oxide)	5.4 mOhm	-55 °C	175 ░C	N-Channel	20 V	Through Hole	TO-247AC	150 V	100 A	4 V	6250 pF

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General part information

N-Channel 150 V 100A (Tc) 500W (Tc) Through Hole TO-247AC

Technical documentation and resources