BAS28WH6327XTSA1

Infineon Technologies

DIODE ARRAY GP 80V 200MA SOT343

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Infineon Technologies

DIODE ARRAY GP 80V 200MA SOT343

Technical Specifications

Parameters and characteristics for this part

Specification	BAS28WH6327XTSA1

Current - Average Rectified (Io) (per Diode)	200 mA
Current - Reverse Leakage @ Vr	100 nA
Diode Configuration	2 Independent
Mounting Type	Surface Mount
Operating Temperature - Junction	150 °C
Package / Case	SC-82A, SOT-343
Reverse Recovery Time (trr)	4 ns
Speed	Any Speed
Speed	200 mA
Supplier Device Package	PG-SOT343-4-3
Technology	Standard
Voltage - DC Reverse (Vr) (Max) [Max]	80 V
Voltage - Forward (Vf) (Max) @ If [Max]	1.25 V

Part	Current - Reverse Leakage @ Vr	Diode Configuration	Package / Case	Current - Average Rectified (Io) (per Diode)	Reverse Recovery Time (trr)	Technology	Supplier Device Package	Voltage - Forward (Vf) (Max) @ If [Max]	Operating Temperature - Junction	Mounting Type	Voltage - DC Reverse (Vr) (Max) [Max]	Speed	Speed
Infineon Technologies BAS28WH6327XTSA1	100 nA	2 Independent	SC-82A SOT-343	200 mA	4 ns	Standard	PG-SOT343-4-3	1.25 V	150 °C	Surface Mount	80 V	Any Speed	200 mA

Prices provided here are for design reference only. For realtime values and availability, please visit the distributors directly

General part information

Diode Array 2 Independent 80 V 200mA (DC) Surface Mount SC-82A, SOT-343

Technical documentation and resources