Technical Specifications
Parameters and characteristics for this part
| Specification | STF42N60M2-EP |
|---|---|
| Current - Continuous Drain (Id) @ 25°C | 34 A |
| Drain to Source Voltage (Vdss) | 600 V |
| Drive Voltage (Max Rds On, Min Rds On) | 10 V |
| FET Type | N-Channel |
| Gate Charge (Qg) (Max) @ Vgs | 55 nC |
| Input Capacitance (Ciss) (Max) @ Vds [Max] | 2370 pF |
| Mounting Type | Through Hole |
| Operating Temperature | 150 °C |
| Package / Case | TO-220-3 Full Pack |
| Power Dissipation (Max) | 40 W |
| Rds On (Max) @ Id, Vgs | 87 mOhm |
| Supplier Device Package | TO-220FP |
| Technology | MOSFET (Metal Oxide) |
| Vgs (Max) | 25 V |
| Vgs(th) (Max) @ Id | 4.75 V |
Pricing
Prices provided here are for design reference only. For realtime values and availability, please visit the distributors directly
Description
General part information
STF42N60M2-EP Series
These devices are N-channel Power MOSFETs developed using MDmesh™ M2 EP enhanced performance technology. Thanks to their strip layout and improved vertical structure, the devices exhibit low on-resistance and optimized switching characteristics with very low turn-off switching losses, rendering them suitable for the most demanding very high frequency converters.
Documents
Technical documentation and resources
AN4406
Application Notes (5 of 9)Flyers (5 of 10)
DS10814
Product SpecificationsFlyers (5 of 10)
TN1225
Technical Notes & ArticlesFlyers (5 of 10)
AN2344
Application Notes (5 of 9)AN2842
Application Notes (5 of 9)Flyers (5 of 10)
AN4829
Application Notes (5 of 9)AN4720
Application Notes (5 of 9)Flyers (5 of 10)
TN1224
Technical Notes & ArticlesUM1575
User ManualsFlyers (5 of 10)
Flyers (5 of 10)
TN1378
Technical Notes & ArticlesFlyers (5 of 10)
Flyers (5 of 10)
Flyers (5 of 10)
