DMNH10H028SK3-13
ActiveDiodes Inc
100V 175°C N-CHANNEL ENHANCEMENT MODE MOSFET
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DMNH10H028SK3-13
ActiveDiodes Inc
100V 175°C N-CHANNEL ENHANCEMENT MODE MOSFET
Deep-Dive with AI
Technical Specifications
Parameters and characteristics for this part
| Specification | DMNH10H028SK3-13 |
|---|---|
| Current - Continuous Drain (Id) @ 25°C | 55 A |
| Drain to Source Voltage (Vdss) | 100 V |
| Drive Voltage (Max Rds On, Min Rds On) | 10 V |
| FET Type | N-Channel |
| Gate Charge (Qg) (Max) @ Vgs | 36 nC |
| Input Capacitance (Ciss) (Max) @ Vds | 2245 pF |
| Mounting Type | Surface Mount |
| Operating Temperature [Max] | 175 ░C |
| Operating Temperature [Min] | -55 °C |
| Package / Case | SC-63, DPAK (2 Leads + Tab), TO-252-3 |
| Power Dissipation (Max) [Max] | 2 W |
| Rds On (Max) @ Id, Vgs | 28 mOhm |
| Supplier Device Package | TO-252-3 |
| Technology | MOSFET (Metal Oxide) |
| Vgs (Max) | 20 V |
| Vgs(th) (Max) @ Id | 3.3 V |
Pricing
Prices provided here are for design reference only. For realtime values and availability, please visit the distributors directly
| Distributor | Package | Quantity | $ | |
|---|---|---|---|---|
| Digikey | Cut Tape (CT) | 1 | $ 1.61 | |
| Digi-Reel® | 1 | $ 1.61 | ||
| Tape & Reel (TR) | 2500 | $ 0.55 | ||
| 5000 | $ 0.53 | |||
Description
General part information
DMNH10H028SPSQ Series
This MOSFET is designed to meet the stringent requirements of automotive applications. It is qualified to AEC-Q101, supported by a PPAP and is ideal for use in: engine management systems, body control electronics, and DC-DC converters.
Documents
Technical documentation and resources