BSC155N06NDATMA1

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Infineon Technologies

OPTIMOS™ 3 N+N DUAL POWER MOSFET 60 V ; SUPERSO8 5X6 PACKAGE; 15.5 MOHM;

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Infineon Technologies

OPTIMOS™ 3 N+N DUAL POWER MOSFET 60 V ; SUPERSO8 5X6 PACKAGE; 15.5 MOHM;

Technical Specifications

Parameters and characteristics for this part

Specification	BSC155N06NDATMA1

Configuration	2 N-Channel (Dual)
Current - Continuous Drain (Id) @ 25°C	20 A
Drain to Source Voltage (Vdss)	60 V
Gate Charge (Qg) (Max) @ Vgs	29 nC
Input Capacitance (Ciss) (Max) @ Vds	2250 pF
Mounting Type	Surface Mount
Operating Temperature [Max]	175 ░C
Operating Temperature [Min]	-55 °C
Package / Case	8-PowerVDFN
Power - Max [Max]	50 W
Rds On (Max) @ Id, Vgs	15.5 mOhm
Supplier Device Package	PG-TDSON-8-4
Technology	MOSFET (Metal Oxide)
Vgs(th) (Max) @ Id	4 V

Part	Mounting Type	Power - Max [Max]	Configuration	Gate Charge (Qg) (Max) @ Vgs	Input Capacitance (Ciss) (Max) @ Vds	Operating Temperature [Min]	Operating Temperature [Max]	Supplier Device Package	Current - Continuous Drain (Id) @ 25°C	Rds On (Max) @ Id, Vgs	Vgs(th) (Max) @ Id	Package / Case	Drain to Source Voltage (Vdss)	Technology
Infineon Technologies BSC155N06NDATMA1	Surface Mount	50 W	2 N-Channel (Dual)	29 nC	2250 pF	-55 °C	175 ░C	PG-TDSON-8-4	20 A	15.5 mOhm	4 V	8-PowerVDFN	60 V	MOSFET (Metal Oxide)

Prices provided here are for design reference only. For realtime values and availability, please visit the distributors directly

General part information

Mosfet Array 60V 20A (Tc) 50W (Tc) Surface Mount PG-TDSON-8-4

Technical documentation and resources