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BSC190N12NS3GATMA1 - INFINEON BSC190N12NS3GATMA1

BSC190N12NS3GATMA1

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Infineon Technologies

OPTIMOS™ 3 N-CHANNEL POWER MOSFET 120 V ; SUPERSO8 5X6 PACKAGE; 19 MOHM;

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Search across all available documentation for this part.

BSC190N12NS3GATMA1 - INFINEON BSC190N12NS3GATMA1

BSC190N12NS3GATMA1

Active
Infineon Technologies

OPTIMOS™ 3 N-CHANNEL POWER MOSFET 120 V ; SUPERSO8 5X6 PACKAGE; 19 MOHM;

Deep-Dive with AI

Technical Specifications

Parameters and characteristics for this part

SpecificationBSC190N12NS3GATMA1
Current - Continuous Drain (Id) @ 25°C44 A, 8.6 A
Drain to Source Voltage (Vdss)120 V
Drive Voltage (Max Rds On, Min Rds On)10 V
FET TypeN-Channel
Gate Charge (Qg) (Max) @ Vgs34 nC
Input Capacitance (Ciss) (Max) @ Vds2300 pF
Mounting TypeSurface Mount
Operating Temperature [Max]150 °C
Operating Temperature [Min]-55 °C
Package / Case8-PowerTDFN
Rds On (Max) @ Id, Vgs19 mOhm
Supplier Device PackagePG-TDSON-8-1
TechnologyMOSFET (Metal Oxide)
Vgs (Max)20 V
Vgs(th) (Max) @ Id4 V

Pricing

Prices provided here are for design reference only. For realtime values and availability, please visit the distributors directly

DistributorPackageQuantity$
ArrowN/A 1$ 1.57
10$ 1.20
50$ 1.13
100$ 0.83
200$ 0.77
DigikeyCut Tape (CT) 1$ 1.94
10$ 1.24
100$ 0.83
500$ 0.66
1000$ 0.61
2000$ 0.56
Digi-Reel® 1$ 1.94
10$ 1.24
100$ 0.83
500$ 0.66
1000$ 0.61
2000$ 0.56
Tape & Reel (TR) 5000$ 0.52

Description

General part information

BSC190 Series

The 120 V OptiMOS™ family offers at the same time the lowest on-state resistances of the industry and the fastest switching behavior, allowing for the achievement of outstanding performance in a wide range of applications.The 120 V OptiMOS™ technology gives new possibilites for optimized solutions.

Documents

Technical documentation and resources