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R6507KND3TL1

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Rohm Semiconductor

HIGH-SPEED SWITCHING, NCH 650V 7A, TO-252 (DPAK), POWER MOSFET

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Product dimension image

R6507KND3TL1

Active
Rohm Semiconductor

HIGH-SPEED SWITCHING, NCH 650V 7A, TO-252 (DPAK), POWER MOSFET

Find alt

Description

General part information

R6507 Series

The R6xxxKNx series are high-speed switching products, Super Junction MOSFETs, that place an emphasis on high efficiency. This series products achieve higher efficiency via high-speed switching. High-speed switching makes it possible to contribute to higher efficiency in PFC and LLC circuits.

Technical Specifications

Parameters and characteristics for this part

SpecificationR6507KND3TL1
Current - Continuous Drain (Id) (Tc)7 A
Drain to Source Voltage (Vdss)650 V
Drive Voltage (Max Rds On, Min Rds On)10 V
FET TypeN-Channel
Gate Charge (Max)14.5 nC
Input Capacitance (Ciss) (Max)470 pF
Mounting TypeSurface Mount
Operating Temperature150 °C
Package / CaseSC-63, DPAK (2 Leads + Tab), TO-252-3
Package NameTO-252
Power Dissipation (Max)78 W
Rds On (Max)665 mOhm
TechnologyMOSFET (Metal Oxide)
Vgs (Max)20 V
Vgs(th) (Max)5 V

Pricing

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CAD

3D models and CAD resources for this part

Documents

Technical documentation and resources

Example of Heat Dissipation Design for TO Packages: Effect of Heat Dissipation Materials
Part Explanation
Explanation for Marking
Basics of Thermal Resistance and Heat Dissipation
Two-Resistor Model for Thermal Simulation
Measurement Method and Usage of Thermal Resistance RthJC
Compliance of the RoHS directive
How to Use LTspice® Models: Tips for Improving Convergence
Report of SVHC under REACH Regulation
Method for Monitoring Switching Waveform
Package Dimensions
Notes for Temperature Measurement Using Forward Voltage of PN Junction
Anti-Whisker formation - Transistors
Types and Features of Transistors
Method for Calculating Junction Temperature from Transient Thermal Resistance Data
θ<sub>JA</sub> and Ψ<sub>JT</sub>
Overview of ROHM's Simulation Models(for ICs and Discrete Semiconductors)
θ<sub>JC</sub> and Ψ<sub>JT</sub>
Moisture Sensitivity Level - Transistors
MOSFET Gate Resistor Setting for Motor Driving
TO-252_TL1 Taping Information
What Is Thermal Design
About Export Regulations
Reliability Test Result
Power Eco Family: Overview of ROHM's Power Semiconductor Lineup
List of Transistor Package Thermal Resistance
MOSFET Gate Drive Current Setting for Motor Driving
What is a Thermal Model? (Transistor)
Notes for Calculating Power Consumption:Static Operation
Temperature derating method for Safe Operating Area (SOA)
How to Use LTspice&reg; Models
R6507KND3 ESD Data
Precautions When Measuring the Rear of the Package with a Thermocouple
Notes for Temperature Measurement Using Thermocouples
PCB Layout Thermal Design Guide
Judgment Criteria of Thermal Evaluation
How to Use the Thermal Resistance and Thermal Characteristics Parameters
Impedance Characteristics of Bypass Capacitor
R6507KND3 Data Sheet
About Flammability of Materials
Condition of Soldering / Land Pattern Reference
Importance of Probe Calibration When Measuring Power: Deskew
Calculation of Power Dissipation in Switching Circuit