AUIRF8739L2TR

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Infineon Technologies

AUIRF8739L2 IS AN AUTOMOTIVE MOSFET OFFERING 40V, N-CH, 0.6 MΩ MAX, DIRECTFET L8, GEN 12.7 FOR HIGH PERFORMANCE.

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Active

Infineon Technologies

AUIRF8739L2 IS AN AUTOMOTIVE MOSFET OFFERING 40V, N-CH, 0.6 MΩ MAX, DIRECTFET L8, GEN 12.7 FOR HIGH PERFORMANCE.

Technical Specifications

Parameters and characteristics for this part

Specification	AUIRF8739L2TR

Current - Continuous Drain (Id) @ 25°C	57 A, 545 A
Drain to Source Voltage (Vdss)	40 V
Drive Voltage (Max Rds On, Min Rds On)	10 V
FET Type	N-Channel
Gate Charge (Qg) (Max) @ Vgs [Max]	562 nC
Input Capacitance (Ciss) (Max) @ Vds [Max]	17890 pF
Mounting Type	Surface Mount
Operating Temperature [Max]	175 ░C
Operating Temperature [Min]	-55 °C
Package / Case	DirectFET™ Isometric L8
Power Dissipation (Max)	340 W, 3.8 W
Rds On (Max) @ Id, Vgs	0.6 mOhm
Supplier Device Package	DirectFET™ Isometric L8
Technology	MOSFET (Metal Oxide)
Vgs (Max) [Max]	40 V
Vgs(th) (Max) @ Id	3.9 V

Part	Gate Charge (Qg) (Max) @ Vgs [Max]	Power Dissipation (Max)	Rds On (Max) @ Id, Vgs	Current - Continuous Drain (Id) @ 25°C	Vgs(th) (Max) @ Id	FET Type	Package / Case	Vgs (Max) [Max]	Technology	Input Capacitance (Ciss) (Max) @ Vds [Max]	Operating Temperature [Min]	Operating Temperature [Max]	Drive Voltage (Max Rds On, Min Rds On)	Drain to Source Voltage (Vdss)	Supplier Device Package	Mounting Type
Infineon Technologies AUIRF8739L2TR	562 nC	3.8 W 340 W	0.6 mOhm	57 A 545 A	3.9 V	N-Channel	DirectFET™ Isometric L8	40 V	MOSFET (Metal Oxide)	17890 pF	-55 °C	175 ░C	10 V	40 V	DirectFET™ Isometric L8	Surface Mount

Prices provided here are for design reference only. For realtime values and availability, please visit the distributors directly

General part information

N-Channel 40 V 57A (Ta), 545A (Tc) 3.8W (Ta), 340W (Tc) Surface Mount DirectFET™ Isometric L8

Technical documentation and resources