Specification	PJMB210N65EC_R2_00601

Current - Continuous Drain (Id) (Tc)	19 A
Drain to Source Voltage (Vdss)	650 V
Drive Voltage (Max Rds On, Min Rds On)	10 V
FET Type	N-Channel
Gate Charge (Max)	34 nC
Input Capacitance (Ciss) (Max)	1412 pF
Mounting Type	Surface Mount
Operating Temperature (Max)	150 °C
Operating Temperature (Min)	-55 °C
Package / Case	D2PAK (2 Leads + Tab), TO-263-3, TO-263AB
Package Name	TO-263
Power Dissipation (Max)	150 W
Rds On (Max)	210 mOhm
Technology	MOSFET (Metal Oxide)
Vgs (Max)	30 V
Vgs(th) (Max)	4 V

PJMB210 Series

Part	Vgs (Max)	Input Capacitance (Ciss) (Max)	Rds On (Max)	Current - Continuous Drain (Id) (Tc)	Package / Case	Vgs(th) (Max)	Gate Charge (Max)	Technology	Package Name	Power Dissipation (Max)	Mounting Type	Drain to Source Voltage (Vdss)	FET Type	Operating Temperature (Min)	Operating Temperature (Max)	Drive Voltage (Max Rds On, Min Rds On)
Panjit International Inc. PJMB210N65EC_R2_00601	30 V	1412 pF	210 mOhm	19 A	D2PAK (2 Leads + Tab) TO-263-3 TO-263AB	4 V	34 nC	MOSFET (Metal Oxide)	TO-263	150 W	Surface Mount	650 V	N-Channel	-55 °C	150 °C	10 V

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