SCT4045DWATL
ActiveRohm Semiconductor
SILICON CARBIDE MOSFET, SINGLE, N CHANNEL, 31 A, 750 V, 0.059 OHM, TO-263
SCT4045DWATL
ActiveRohm Semiconductor
SILICON CARBIDE MOSFET, SINGLE, N CHANNEL, 31 A, 750 V, 0.059 OHM, TO-263
Description
General part information
SCT4045DWA Series
SCT4045DWA is an SiC (Silicon Carbide) trench MOSFET. Features include high voltage resistance, low ON resistance, and fast switching speed.Advantages of ROHM's 4th Generation SiC MOSFETThis series has about 40% reduction in on-resistance and about 50% reduction in switching loss compared to conventional products. The 15V gate-source voltage makes application design easier.
Technical Specifications
Parameters and characteristics for this part
| Specification | SCT4045DWATL |
|---|---|
| Current - Continuous Drain (Id) (Tc) | 31 A |
| Drain to Source Voltage (Vdss) | 750 V |
| Drive Voltage (Max Rds On, Min Rds On) | 18 V |
| FET Type | N-Channel |
| Gate Charge (Max) | 63 nC |
| Input Capacitance (Ciss) (Max) | 1460 pF |
| Mounting Type | Surface Mount |
| Operating Temperature | 175 °C |
| Package Leads | 7 Leads |
| Package Name | D2PAK, TO-263-7LA |
| Rds On (Max) | 59 mOhm |
| Technology | SiC (Silicon Carbide Junction Transistor), SiCFET (Silicon Carbide) |
| Vgs (Max) Negative | -4 V |
| Vgs (Max) Positive | 21 V |
| Vgs(th) (Max) | 4.8 V |
Pricing
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CAD
3D models and CAD resources for this part
Documents
Technical documentation and resources
How to Use Thermal Models
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New SPICE Models with Improved Simulation Speed for Power Semiconductors Are Released!
Snubber circuit design methods for SiC MOSFET
How to Use LTspice® Models
θ<sub>JC</sub> and Ψ<sub>JT</sub>
TO-263-7LA Package Dimensions
Method for Monitoring Switching Waveform
Moisture Sensitivity Level
Types and Features of Transistors
SiC MOSFET Layout Design Considerations
Notes for Calculating Power Consumption:Static Operation
Thermal Resistance Measurement Method for SiC MOSFET
Oscillation countermeasures for MOSFETs in parallel
About Flammability of Materials
LEADRIVE: Design, Test and System Evaluation of Silicon Carbide Power Modules and Motor Control Units
Basics and Design Guidelines for Gate Drive Circuits
Calculation of Power Dissipation in Switching Circuit
How to Use PLECS Models
4 Steps for Successful Thermal Designing of Power Devices
800V Three-Phase Output LLC DC/DC Resonant Converter
How to measure the oscillation occurs between parallel-connected devices
Simulation Verification to Identify Oscillation between Parallel Dies during Design Phase of Power Modules
Design Method for Comparator-less Miller Clamp Circuits
Application Note for SiC Power Devices and Modules
What is a Thermal Model? (SiC Power Device)
Part Explanation
TO-263-7LA Taping Information
Condition of Soldering
Impedance Characteristics of Bypass Capacitor
Generation Mechanism of Voltage Surge on Commutation Side (Basic)
Gate-source voltage behaviour in a bridge configuration
PCB Layout Thermal Design Guide
Notes for Temperature Measurement Using Thermocouples
Overview of ROHM's Simulation Models(for ICs and Discrete Semiconductors)
Notes for Temperature Measurement Using Forward Voltage of PN Junction
SCT4045DWA Data Sheet
Measurement Method and Usage of Thermal Resistance RthJC
Two-Resistor Model for Thermal Simulation
Anti-Whisker formation
Compliance of the ELV directive
Calculating Power Loss from Measured Waveforms
Solving the challenges of driving SiC MOSFETs with new packaging developments
Cutting-Edge Web Simulation Tool "ROHM Solution Simulator" Capable of Complete Circuit Verification of Power Devices and Driver ICs
Precautions for Thermal Resistance of Insulation Sheet
Best practices for the connection of Driver Source/Emitter terminals in discrete devices
Basics of Thermal Resistance and Heat Dissipation
Judgment Criteria of Thermal Evaluation
θ<sub>JA</sub> and Ψ<sub>JT</sub>
Notes on Gate Drive Voltage Setting and Linear Mode Application of SiC MOSFET
Power Eco Family: Overview of ROHM's Power Semiconductor Lineup
Importance of Probe Calibration When Measuring Power: Deskew
What Is Thermal Design
How to Use LTspice® Models: Tips for Improving Convergence
Precautions When Measuring the Rear of the Package with a Thermocouple
How to Use the Thermal Resistance and Thermal Characteristics Parameters
How to Use PSIM Models
How to Suppress the Parallel Drive Oscillation in SiC Modules
The Problem with Traditional Vaccine Storage Freezers and How ROHM Cutting-edge Power Solutions Can Take them to the Next Level
About Export Administration Regulations (EAR)
Precautions during gate-source voltage measurement for SiC MOSFET
Method for Calculating Junction Temperature from Transient Thermal Resistance Data
Thermal Characterization Guidelines for ROHM's 4th Generation SiC MOSFETs
Gate-Source Voltage Surge Suppression Methods