Zenode.ai Logo
2N6383

2N6383

Active
Microchip Technology

40 V 10A NPN POWER BJT THT TO-3 ROHS COMPLIANT: YES

Find alt
2N6383

2N6383

Active
Microchip Technology

40 V 10A NPN POWER BJT THT TO-3 ROHS COMPLIANT: YES

Find alt

Description

General part information

2N6383 Series

This specification covers the performance requirements for NPN silicon, power Darlington, 2N6383, 2N6384 and 2N6385 transistors. Three levels of product assurance (JAN, JANTX and JANTXV) are provided for each device type as specified in MIL-PRF-19500/523. The device package outlines are as follows: TO-204AA (formerly TO-3) for all encapsulated device types.

Technical Specifications

Parameters and characteristics for this part

Specification2N6383
Current - Collector (Ic) (Max)10 A
Current - Collector Cutoff (Max)1 mA
DC Current Gain (hFE) (Min)1000
Mounting TypeThrough Hole
Operating Temperature (Max)175 °C
Operating Temperature (Min)-55 °C
Package / CaseTO-3, TO-204AA
Package NameTO-204AA (TO-3)
Power - Max6 W
Transistor TypeNPN, Darlington
Vce Saturation (Max)3 V
Voltage - Collector Emitter Breakdown (Max)40 V

Pricing

Prices provided here are for design reference only. For realtime values and availability, please visit the distributors directly

Sign in to see pricing

Create a free account to access distributor pricing data.

CAD

3D models and CAD resources for this part

Documents

Technical documentation and resources