Specification	2SC2712-BL,LF

Current - Collector (Ic) (Max)	150 mA, 0.15 mA
Current - Collector Cutoff (Max)	100 nA
DC Current Gain (hFE) (Min)	70
Frequency - Transition	80 MHz
Mounting Type	Surface Mount
Operating Temperature	125 °C
Package / Case	TO-236-3, SOT-23-3, SC-59
Package Name	S-Mini
Power - Max	150 mW
Transistor Type	NPN
Vce Saturation (Max)	250 mV
Voltage - Collector Emitter Breakdown (Max)	50 V

2SC2712 Series

Part	DC Current Gain (hFE) (Min)	Frequency - Transition	Package / Case	Package Name	Voltage - Collector Emitter Breakdown (Max)	Transistor Type	Power - Max	Vce Saturation (Max)	Current - Collector Cutoff (Max)	Mounting Type	Current - Collector (Ic) (Max)	Operating Temperature
Toshiba Semiconductor and Storage 2SC2712-BL,LXHF	350	80 MHz	SC-59 SOT-23-3 TO-236-3	S-Mini	50 V	NPN	200 mW	250 mV	100 nA	Surface Mount	0.15 mA 150 mA
Toshiba Semiconductor and Storage 2SC2712-GR,LF	70	80 MHz	SC-59 SOT-23-3 TO-236-3	S-Mini	50 V	NPN	150 mW	250 mV	100 nA	Surface Mount	0.15 mA 150 mA	125 °C
Toshiba Semiconductor and Storage 2SC2712-BL,LF	70	80 MHz	SC-59 SOT-23-3 TO-236-3	S-Mini	50 V	NPN	150 mW	250 mV	100 nA	Surface Mount	0.15 mA 150 mA	125 °C
Toshiba Semiconductor and Storage 2SC2712-Y,LF	120	80 MHz	SC-59 SOT-23-3 TO-236-3	S-Mini	50 V	NPN	150 mW	250 mV	100 nA	Surface Mount	0.15 mA 150 mA	125 °C
Toshiba Semiconductor and Storage 2SC2712-Y,LXHF	120	80 MHz	SC-59 SOT-23-3 TO-236-3	S-Mini	50 V	NPN	200 mW	250 mV	100 nA	Surface Mount	0.15 mA 150 mA
Toshiba Semiconductor and Storage 2SC2712-GR,LXHF	200	80 MHz	SC-59 SOT-23-3 TO-236-3	S-Mini	50 V	NPN	200 mW	250 mV	100 nA	Surface Mount	0.15 mA 150 mA