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MAT01AHZ - Analog Devices-MAT01AHZ GP BJT Trans GP BJT NPN 45V 0.025A 1800mW 6-Pin TO-78 Tube

MAT01AHZ

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Analog Devices

TRANS GP BJT NPN 45V 0.025A 1800MW 6-PIN TO-78 TUBE

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MAT01AHZ - Analog Devices-MAT01AHZ GP BJT Trans GP BJT NPN 45V 0.025A 1800mW 6-Pin TO-78 Tube

MAT01AHZ

Active
Analog Devices

TRANS GP BJT NPN 45V 0.025A 1800MW 6-PIN TO-78 TUBE

Technical Specifications

Parameters and characteristics for this part

SpecificationMAT01AHZ
Current - Collector (Ic) (Max) [Max]25 mA
Current - Collector Cutoff (Max) [Max]300 nA
Frequency - Transition450 MHz
Mounting TypeThrough Hole
Operating Temperature [Max]150 °C
Operating Temperature [Min]-55 °C
Package / CaseTO-78-6 Metal Can
Power - Max [Max]500 mW
Supplier Device PackageTO-78-6
Transistor Type2 NPN (Dual) Matched Pair
Vce Saturation (Max) @ Ib, Ic800 mV
Voltage - Collector Emitter Breakdown (Max)45 V

Pricing

Prices provided here are for design reference only. For realtime values and availability, please visit the distributors directly

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Description

General part information

MAT01 Series

The MAT01 is a monolithic dual NPN transistor. An exclusive Silicon Nitride "Triple-Passivation" process provides excellent stability of critical parameters over both temperature and time. Matching characteristics include offset voltage of 40µV, temperature drift of 0.15µV/°C, and hFEmatching of 0.7%.Very high h is provided over a six decade range of collector current, including an exceptional hFEof 590 at a collector current of only 10nA. The high gain at lower collector current makes the MAT01 ideal for use in low-power, low-level input stages.APPLICATIONSWeigh scalesLow noise, op amp, front endCurrent mirror and current sink/sourceLow noise instrumentation amplifiersVoltage controlled attenuatorsLog amplifiers