FZT751TC

Active

Diodes Inc

POWER BIPOLAR TRANSISTOR, 3A I(C), 60V V(BR)CEO, 1-ELEMENT, PNP, SILICON, PLASTIC/EPOXY, 4 PIN,

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Active

Diodes Inc

POWER BIPOLAR TRANSISTOR, 3A I(C), 60V V(BR)CEO, 1-ELEMENT, PNP, SILICON, PLASTIC/EPOXY, 4 PIN,

Technical Specifications

Parameters and characteristics for this part

Specification	FZT751TC

Current - Collector (Ic) (Max) [Max]	3 A
Current - Collector Cutoff (Max) [Max]	100 nA
DC Current Gain (hFE) (Min) @ Ic, Vce [Min]	100
Frequency - Transition	140 MHz
Mounting Type	Surface Mount
Operating Temperature [Max]	150 °C
Operating Temperature [Min]	-55 °C
Package / Case	TO-261AA, TO-261-4
Power - Max [Max]	2 W
Supplier Device Package	SOT-223-3
Transistor Type	PNP
Vce Saturation (Max) @ Ib, Ic	600 mV
Voltage - Collector Emitter Breakdown (Max)	60 V

PNP, 60V, 3A, SOT223

Part	Supplier Device Package	Current - Collector Cutoff (Max) [Max]	Operating Temperature [Min]	Operating Temperature [Max]	Voltage - Collector Emitter Breakdown (Max)	Transistor Type	Frequency - Transition	Vce Saturation (Max) @ Ib, Ic	Package / Case	Current - Collector (Ic) (Max) [Max]	Mounting Type	DC Current Gain (hFE) (Min) @ Ic, Vce [Min]	Power - Max [Max]
Diodes Inc FZT751TC	SOT-223-3	100 nA	-55 °C	150 °C	60 V	PNP	140 MHz	600 mV	TO-261-4 TO-261AA	3 A	Surface Mount	100	2 W
Diodes Inc FZT751QTA	SOT-223-3	100 nA	-55 °C	150 °C	60 V	PNP	140 MHz	600 mV	TO-261-4 TO-261AA	3 A	Surface Mount	100	3 W
Diodes Inc FZT751TA	SOT-223-3	100 nA	-55 °C	150 °C	60 V	PNP	140 MHz	600 mV	TO-261-4 TO-261AA	3 A	Surface Mount	100	2 W

Prices provided here are for design reference only. For realtime values and availability, please visit the distributors directly

General part information

PNP, 60V, 3A, SOT223

Technical documentation and resources