IRS2334SPBF

Obsolete

Infineon Technologies

IC GATE DRVR HALF-BRIDGE 20SOIC

Search across all available documentation for this part.

Obsolete

Infineon Technologies

IC GATE DRVR HALF-BRIDGE 20SOIC

Technical Specifications

Parameters and characteristics for this part

Specification	IRS2334SPBF

Channel Type	3-Phase
Driven Configuration	Half-Bridge
Gate Type	N-Channel MOSFET, IGBT
High Side Voltage - Max (Bootstrap) [Max]	600 V
Input Type	Non-Inverting
Logic Voltage - VIL, VIH	2.5 V, 0.8 V
Mounting Type	Surface Mount
Number of Drivers	6
Operating Temperature [Max]	150 °C
Operating Temperature [Min]	-40 °C
Package / Case	20-SOIC
Package / Case [y]	0.295 in
Package / Case [y]	7.5 mm
Rise / Fall Time (Typ) [custom]	125 ns
Rise / Fall Time (Typ) [custom]	50 ns
Supplier Device Package	20-SOIC
Voltage - Supply [Max]	20 V
Voltage - Supply [Min]	10 VDC

Part	Channel Type	Package / Case	Package / Case [y]	Package / Case [y]	Operating Temperature [Max]	Operating Temperature [Min]	Logic Voltage - VIL, VIH	Mounting Type	Rise / Fall Time (Typ) [custom]	Rise / Fall Time (Typ) [custom]	Driven Configuration	High Side Voltage - Max (Bootstrap) [Max]	Supplier Device Package	Gate Type	Input Type	Voltage - Supply [Max]	Voltage - Supply [Min]	Number of Drivers
Infineon Technologies IRS2334SPBF	3-Phase	20-SOIC	0.295 in	7.5 mm	150 °C	-40 °C	0.8 V 2.5 V	Surface Mount	125 ns	50 ns	Half-Bridge	600 V	20-SOIC	IGBT N-Channel MOSFET	Non-Inverting	20 V	10 VDC	6

Prices provided here are for design reference only. For realtime values and availability, please visit the distributors directly

Distributor	Package	Quantity	$

General part information

Half-Bridge Gate Driver IC Non-Inverting 20-SOIC

Technical documentation and resources

No documents available