Specification	TLP388(E

Current - DC Forward (If) (Max)	50 mA
Current - Output / Channel	50 mA
Current Transfer Ratio (Max)	600 %
Current Transfer Ratio (Min)	50 %
Fall Time (Typ)	3 µs
Input Type	DC
Mounting Type	Surface Mount
Number of Channels	1
Operating Temperature (Max)	125 °C
Operating Temperature (Min)	-55 °C
Output Type	Transistor
Package Features	4 Leads
Package Length	0.295 in, 0.173 in
Package Name	4 Lead, 6-SO, 6-SOIC
Package Width	7.5 mm, 4.4 mm
Rise Time (Typ)	2 µs
Turn Off Time (Typ)	3 µs
Turn On Time (Typ)	3 µs
Vce Saturation (Max)	400 mV
Voltage - Forward (Vf) (Typ)	1.25 V
Voltage - Isolation	5000 Vrms
Voltage - Output (Max)	350 V

TLP388 Series

Isolators and Solid State Relays for Enhanced Safety and Efficiency | Toshiba, Photocoupler (phototransistor output), DC input, 5000 Vrms, 4pin SO6L

Part	Operating Temperature (Max)	Operating Temperature (Min)	Voltage - Output (Max)	Package Name	Current - Output / Channel	Vce Saturation (Max)	Current Transfer Ratio (Max)	Package Length	Package Features	Package Width	Input Type	Number of Channels	Voltage - Forward (Vf) (Typ)	Mounting Type	Current Transfer Ratio (Min)	Voltage - Isolation	Current - DC Forward (If) (Max)	Rise Time (Typ)	Fall Time (Typ)	Turn On Time (Typ)	Turn Off Time (Typ)	Output Type
Toshiba Semiconductor and Storage TLP388(TPL,E	125 °C	-55 °C	350 V	4 Lead 6-SO 6-SOIC	50 mA	400 mV	600 %	0.295 in	4 Leads	7.5 mm	DC	1	1.25 V	Surface Mount	50 %	5000 Vrms	50 mA	2 µs	3 µs	3 µs	3 µs	Transistor
Toshiba Semiconductor and Storage TLP388(GB,E	125 °C	-55 °C	350 V	4 Lead 6-SO 6-SOIC	50 mA	400 mV	600 %	0.173 in 0.295 in	4 Leads	4.4 mm 7.5 mm	DC	1	1.25 V	Surface Mount	100 %	5000 Vrms	50 mA	2 µs	3 µs	3 µs	3 µs	Transistor
Toshiba Semiconductor and Storage TLP388(GB-TPL,E	125 °C	-55 °C	350 V	4 Lead 6-SO 6-SOIC	50 mA	400 mV	600 %	0.295 in	4 Leads	7.5 mm	DC	1	1.25 V	Surface Mount	100 %	5000 Vrms	50 mA	2 µs	3 µs	3 µs	3 µs	Transistor
Toshiba Semiconductor and Storage TLP388(D4,E	125 °C	-55 °C	350 V	4 Lead 6-SO 6-SOIC	50 mA	400 mV	600 %	0.173 in 0.295 in	4 Leads	4.4 mm 7.5 mm	DC	1	1.25 V	Surface Mount	50 %	5000 Vrms	50 mA	2 µs	3 µs	3 µs	3 µs	Transistor
Toshiba Semiconductor and Storage TLP388(D4-TPL,E	125 °C	-55 °C	350 V	4 Lead 6-SO 6-SOIC	50 mA	400 mV	600 %	0.295 in	4 Leads	7.5 mm	DC	1	1.25 V	Surface Mount	50 %	5000 Vrms	50 mA	2 µs	3 µs	3 µs	3 µs	Transistor
Toshiba Semiconductor and Storage TLP388(E	125 °C	-55 °C	350 V	4 Lead 6-SO 6-SOIC	50 mA	400 mV	600 %	0.173 in 0.295 in	4 Leads	4.4 mm 7.5 mm	DC	1	1.25 V	Surface Mount	50 %	5000 Vrms	50 mA	2 µs	3 µs	3 µs	3 µs	Transistor
Toshiba Semiconductor and Storage TLP388(D4GB-TL,E	125 °C	-55 °C	350 V	4 Lead 6-SO 6-SOIC	50 mA	400 mV	600 %	0.295 in	4 Leads	7.5 mm	DC	1	1.25 V	Surface Mount	100 %	5000 Vrms	50 mA	2 µs	3 µs	3 µs	3 µs	Transistor
Toshiba Semiconductor and Storage TLP388(D4-GB,E	125 °C	-55 °C	350 V	4 Lead 6-SO 6-SOIC	50 mA	400 mV	600 %	0.173 in 0.295 in	4 Leads	4.4 mm 7.5 mm	DC	1	1.25 V	Surface Mount	100 %	5000 Vrms	50 mA	2 µs	3 µs	3 µs	3 µs	Transistor
Toshiba Semiconductor and Storage TLP388(TPR,E	125 °C	-55 °C	350 V	4 Lead 6-SO 6-SOIC	50 mA	400 mV	600 %	0.295 in	4 Leads	7.5 mm	DC	1	1.25 V	Surface Mount	50 %	5000 Vrms	50 mA	2 µs	3 µs	3 µs	3 µs	Transistor

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TLP388(E | Datasheet