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STP28N65M2 - TO-220-3

STP28N65M2

Active
STMicroelectronics

N-CHANNEL 650 V, 0.15 OHM TYP., 20 A MDMESH M2 POWER MOSFET IN TO-220 PACKAGE

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Search across all available documentation for this part.

DocumentsDatasheet+24
STP28N65M2 - TO-220-3

STP28N65M2

Active
STMicroelectronics

N-CHANNEL 650 V, 0.15 OHM TYP., 20 A MDMESH M2 POWER MOSFET IN TO-220 PACKAGE

Deep-Dive with AI

DocumentsDatasheet+24

Technical Specifications

Parameters and characteristics for this part

SpecificationSTP28N65M2
Current - Continuous Drain (Id) @ 25°C20 A
Drain to Source Voltage (Vdss)650 V
Drive Voltage (Max Rds On, Min Rds On)10 V
FET TypeN-Channel
Gate Charge (Qg) (Max) @ Vgs [Max]35 nC
Input Capacitance (Ciss) (Max) @ Vds [Max]1440 pF
Mounting TypeThrough Hole
Operating Temperature150 °C
Package / CaseTO-220-3
Power Dissipation (Max)170 W
Rds On (Max) @ Id, Vgs180 mOhm
Supplier Device PackageTO-220
TechnologyMOSFET (Metal Oxide)
Vgs (Max)25 V
Vgs(th) (Max) @ Id4 V

Pricing

Prices provided here are for design reference only. For realtime values and availability, please visit the distributors directly

DistributorPackageQuantity$
DigikeyTube 1$ 3.50
10$ 2.59
50$ 1.91
100$ 1.81
500$ 1.48
1000$ 1.38
2000$ 1.32

Description

General part information

STP28NM50N Series

These devices are N-channel Power MOSFETs developed using the second generation of MDmesh™ technology. This revolutionary Power MOSFET associates a vertical structure to the company's strip layout to yield one of the world's lowest on-resistance and gate charge. It is therefore suitable for the most demanding high efficiency converters.