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IRL60HS118 - 6-PowerVDFN

IRL60HS118

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Infineon Technologies

OPTIMOS™ 5 N-CHANNEL POWER MOSFET 60 V ; PQFN 2 X 2 PACKAGE; 17 MOHM;

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IRL60HS118 - 6-PowerVDFN

IRL60HS118

Active
Infineon Technologies

OPTIMOS™ 5 N-CHANNEL POWER MOSFET 60 V ; PQFN 2 X 2 PACKAGE; 17 MOHM;

Deep-Dive with AI

DocumentsDatasheet

Technical Specifications

Parameters and characteristics for this part

SpecificationIRL60HS118
Current - Continuous Drain (Id) @ 25°C18.5 A
Drain to Source Voltage (Vdss)60 V
Drive Voltage (Max Rds On, Min Rds On)10 V, 4.5 V
FET TypeN-Channel
Gate Charge (Qg) (Max) @ Vgs8 nC
Mounting TypeSurface Mount
Operating Temperature [Max]175 ░C
Operating Temperature [Min]-55 °C
Package / Case6-PowerVDFN
Power Dissipation (Max) [Max]11.5 W
Rds On (Max) @ Id, Vgs17 mOhm
TechnologyMOSFET (Metal Oxide)
Vgs (Max)20 V
Vgs(th) (Max) @ Id2.3 V

Pricing

Prices provided here are for design reference only. For realtime values and availability, please visit the distributors directly

DistributorPackageQuantity$
DigikeyCut Tape (CT) 1$ 1.34
10$ 0.84
100$ 0.56
500$ 0.44
1000$ 0.40
2000$ 0.36
Digi-Reel® 1$ 1.34
10$ 0.84
100$ 0.56
500$ 0.44
1000$ 0.40
2000$ 0.36
Tape & Reel (TR) 4000$ 0.34
8000$ 0.31
12000$ 0.31
NewarkEach (Supplied on Full Reel) 4000$ 0.51
8000$ 0.50

Description

General part information

IRL60HS118 Series

Available in three different voltage classes (60 V, 80 V and 100 V), Infineon’snew logic level power MOSFETsare highly suitable forwireless charging,telecomandadapterapplications. The PQFN 2x2 package is especially suited for high speed switching and form factor critical applications. It enables higher power density and improved efficiency as well as significant space saving. VGS

Documents

Technical documentation and resources