
IRL60HS118
ActiveOPTIMOS™ 5 N-CHANNEL POWER MOSFET 60 V ; PQFN 2 X 2 PACKAGE; 17 MOHM;
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IRL60HS118
ActiveOPTIMOS™ 5 N-CHANNEL POWER MOSFET 60 V ; PQFN 2 X 2 PACKAGE; 17 MOHM;
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Technical Specifications
Parameters and characteristics for this part
| Specification | IRL60HS118 |
|---|---|
| Current - Continuous Drain (Id) @ 25°C | 18.5 A |
| Drain to Source Voltage (Vdss) | 60 V |
| Drive Voltage (Max Rds On, Min Rds On) | 10 V, 4.5 V |
| FET Type | N-Channel |
| Gate Charge (Qg) (Max) @ Vgs | 8 nC |
| Mounting Type | Surface Mount |
| Operating Temperature [Max] | 175 ░C |
| Operating Temperature [Min] | -55 °C |
| Package / Case | 6-PowerVDFN |
| Power Dissipation (Max) [Max] | 11.5 W |
| Rds On (Max) @ Id, Vgs | 17 mOhm |
| Technology | MOSFET (Metal Oxide) |
| Vgs (Max) | 20 V |
| Vgs(th) (Max) @ Id | 2.3 V |
Pricing
Prices provided here are for design reference only. For realtime values and availability, please visit the distributors directly
Description
General part information
IRL60HS118 Series
Available in three different voltage classes (60 V, 80 V and 100 V), Infineon’snew logic level power MOSFETsare highly suitable forwireless charging,telecomandadapterapplications. The PQFN 2x2 package is especially suited for high speed switching and form factor critical applications. It enables higher power density and improved efficiency as well as significant space saving. VGS
Documents
Technical documentation and resources