DMTH6004SPS-13

Active

Diodes Inc

60V +175°C N-CHANNEL ENHANCEMENT MODE MOSFET

Deep-Dive with AI

Search across all available documentation for this part.

DocumentsDatasheet Recommended Soldering Techniques +1

DMTH6004SPS-13

Active

Diodes Inc

60V +175°C N-CHANNEL ENHANCEMENT MODE MOSFET

Deep-Dive with AI

DocumentsDatasheet Recommended Soldering Techniques +1

Specifications Pricing Series Description Documents

Technical Specifications

Parameters and characteristics for this part

Specification	DMTH6004SPS-13

Current - Continuous Drain (Id) @ 25°C	100 A, 25 A
Drain to Source Voltage (Vdss)	60 V
Drive Voltage (Max Rds On, Min Rds On)	10 V
FET Type	N-Channel
Gate Charge (Qg) (Max) @ Vgs	95.4 nC
Input Capacitance (Ciss) (Max) @ Vds	4556 pF
Mounting Type	Surface Mount
Operating Temperature [Max]	175 ░C
Operating Temperature [Min]	-55 °C
Package / Case	8-PowerTDFN
Power Dissipation (Max)	2.1 W, 167 W
Rds On (Max) @ Id, Vgs [Max]	3.1 mOhm
Supplier Device Package	PowerDI5060-8
Technology	MOSFET (Metal Oxide)
Vgs (Max)	20 V
Vgs(th) (Max) @ Id	4 V

DMTH6004SCTBQ Series

60V +175°C N-Channel Enhancement Mode MOSFET

Part	Input Capacitance (Ciss) (Max) @ Vds	Supplier Device Package	Drain to Source Voltage (Vdss)	Drive Voltage (Max Rds On, Min Rds On)	Technology	Operating Temperature [Min]	Operating Temperature [Max]	Package / Case	FET Type	Grade	Vgs(th) (Max) @ Id	Vgs (Max)	Mounting Type	Gate Charge (Qg) (Max) @ Vgs	Power Dissipation (Max)	Rds On (Max) @ Id, Vgs [Max]	Current - Continuous Drain (Id) @ 25°C	Qualification	Rds On (Max) @ Id, Vgs
Diodes Inc DMTH6004SCTBQ-13	4556 pF	TO-263	60 V	10 V	MOSFET (Metal Oxide)	-55 °C	175 ░C	D2PAK (2 Leads + Tab) TO-263-3 TO-263AB	N-Channel	Automotive	4 V	20 V	Surface Mount	95.4 nC	4.7 W 136 W	3.4 mOhm	100 A	AEC-Q101
Diodes Inc DMTH6004SCT	4556 pF	TO-220-3	60 V	10 V	MOSFET (Metal Oxide)	-55 °C	175 ░C	TO-220-3	N-Channel		4 V	20 V	Through Hole	95.4 nC	2.8 W 136 W		100 A		3.65 mOhm
Diodes Inc DMTH6004SPS-13	4556 pF	PowerDI5060-8	60 V	10 V	MOSFET (Metal Oxide)	-55 °C	175 ░C	8-PowerTDFN	N-Channel		4 V	20 V	Surface Mount	95.4 nC	2.1 W 167 W	3.1 mOhm	25 A 100 A
Diodes Inc DMTH6004LPS-13	4515 pF	PowerDI5060-8	60 V	4.5 V 10 V	MOSFET (Metal Oxide)	-55 °C	175 ░C	8-PowerTDFN	N-Channel		3 V	20 V	Surface Mount	96.3 nC	2.6 W 138 W		22 A 100 A		2.8 mOhm
Diodes Inc DMTH6004SCTB-13	4556 pF	TO-263	60 V	10 V	MOSFET (Metal Oxide)	-55 °C	175 ░C	D2PAK (2 Leads + Tab) TO-263-3 TO-263AB	N-Channel	Automotive	4 V	20 V	Surface Mount	95.4 nC	4.7 W 136 W	3.4 mOhm	100 A	AEC-Q101
Diodes Inc DMTH6004LPSQ-13	4515 pF	PowerDI5060-8	60 V	4.5 V 10 V	MOSFET (Metal Oxide)	-55 °C	175 ░C	8-PowerTDFN	N-Channel	Automotive	3 V	20 V	Surface Mount		2.6 W 138 W	3.1 mOhm	100 A	AEC-Q101

Pricing

Prices provided here are for design reference only. For realtime values and availability, please visit the distributors directly

Distributor	Package	Quantity	$

Digikey	Cut Tape (CT)	1	$ 2.57
	Digi-Reel®	1	$ 2.57
	Tape & Reel (TR)	2500	$ 0.74
		5000	$ 0.73

Description

General part information

DMTH6004SCTBQ Series

This MOSFET is designed to meet the stringent requirements of automotive applications. It is qualified to AEC-Q101, supported by a PPAP and is ideal for use in: primary switches in isolated DC-DC, synchronous rectifiers, and load switches.