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JAN2N5302

JAN2N5302

Active
Microchip Technology

60V 30A 5W NPN POWER BJT THT TO-3 ROHS COMPLIANT: YES

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JAN2N5302

JAN2N5302

Active
Microchip Technology

60V 30A 5W NPN POWER BJT THT TO-3 ROHS COMPLIANT: YES

Find alt

Description

General part information

2N5302 Series

This specification covers the performance requirements for NPN, silicon, high-power, 2N5302 and 2N5303 transistors. Four levels of product assurance (JAN, JANTX, JANTXV and JANS) are provided for each device type as specified in MIL-PRF-19500/456. The device package for the encapsulated device types is a TO-204AA (similar to TO-3).

Technical Specifications

Parameters and characteristics for this part

SpecificationJAN2N5302
Current - Collector (Ic) (Max)30 A
Current - Collector Cutoff (Max)10 µA
DC Current Gain (hFE) (Min)15
GradeMilitary
Mounting TypeThrough Hole
Operating Temperature (Max)200 °C
Operating Temperature (Min)-65 °C
Package / CaseTO-3, TO-204AA
Package NameTO-3 (TO-204AA)
Power - Max5 VA
Qualification456, MIL-PRF-19500
Transistor TypeNPN
Vce Saturation (Max)3 V
Voltage - Collector Emitter Breakdown (Max)60 V

Pricing

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