TSM230N06CP ROG

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Taiwan Semiconductor Corporation

MOSFET N-CHANNEL 60V 34A TO252

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Taiwan Semiconductor Corporation

MOSFET N-CHANNEL 60V 34A TO252

Technical Specifications

Parameters and characteristics for this part

Specification	TSM230N06CP ROG

Current - Continuous Drain (Id) @ 25°C	34 A
Drain to Source Voltage (Vdss)	60 V
Drive Voltage (Max Rds On, Min Rds On)	10 V, 4.5 V
FET Type	N-Channel
Gate Charge (Qg) (Max) @ Vgs [Max]	28 nC
Input Capacitance (Ciss) (Max) @ Vds	1680 pF
Mounting Type	Surface Mount
Operating Temperature	150 °C
Package / Case	SC-63, DPAK (2 Leads + Tab), TO-252-3
Power Dissipation (Max)	104 W
Rds On (Max) @ Id, Vgs	23 mOhm
Supplier Device Package	TO-252 (DPAK)
Technology	MOSFET (Metal Oxide)
Vgs (Max)	20 V
Vgs(th) (Max) @ Id	2.5 V

Part	Drain to Source Voltage (Vdss)	Supplier Device Package	Gate Charge (Qg) (Max) @ Vgs [Max]	Input Capacitance (Ciss) (Max) @ Vds	Mounting Type	Current - Continuous Drain (Id) @ 25°C	Rds On (Max) @ Id, Vgs	Drive Voltage (Max Rds On, Min Rds On)	Package / Case	Operating Temperature [Min]	Operating Temperature [Max]	Vgs(th) (Max) @ Id	Vgs (Max)	Power Dissipation (Max)	FET Type	Technology	Operating Temperature
Taiwan Semiconductor Corporation TSM230N06PQ56 RLG	60 V	8-PDFN (5x6)	28 nC	1680 pF	Surface Mount	44 A	23 mOhm	4.5 V 10 V	8-PowerTDFN	-55 °C	150 °C	2.5 V	20 V	83 W	N-Channel	MOSFET (Metal Oxide)
Taiwan Semiconductor Corporation TSM230N06CP	60 V	TO-252 (DPAK)	28 nC	1680 pF	Surface Mount	50 A	23 mOhm	4.5 V 10 V	DPAK (2 Leads + Tab) SC-63 TO-252-3			2.5 V	20 V	53 W	N-Channel	MOSFET (Metal Oxide)	150 °C
Taiwan Semiconductor Corporation TSM230N06CP ROG	60 V	TO-252 (DPAK)	28 nC	1680 pF	Surface Mount	34 A	23 mOhm	4.5 V 10 V	DPAK (2 Leads + Tab) SC-63 TO-252-3			2.5 V	20 V	104 W	N-Channel	MOSFET (Metal Oxide)	150 °C

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General part information

N-Channel 60 V 34A (Tc) 104W (Tc) Surface Mount TO-252 (DPAK)

Technical documentation and resources