IXFL132N50P3

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IXYS

MOSFET N-CH 500V 63A ISOPLUS264

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IXYS

MOSFET N-CH 500V 63A ISOPLUS264

Technical Specifications

Parameters and characteristics for this part

Specification	IXFL132N50P3

Current - Continuous Drain (Id) @ 25°C	63 A
Drain to Source Voltage (Vdss)	500 V
Drive Voltage (Max Rds On, Min Rds On)	10 V
FET Type	N-Channel
Input Capacitance (Ciss) (Max) @ Vds [Max]	18600 pF
Mounting Type	Through Hole
Operating Temperature [Max]	150 °C
Operating Temperature [Min]	-55 °C
Package / Case	TO-264AA, TO-264-3
Power Dissipation (Max) [Max]	520 W
Rds On (Max) @ Id, Vgs	43 mOhm
Supplier Device Package	ISOPLUS264™
Technology	MOSFET (Metal Oxide)
Vgs (Max)	30 V
Vgs(th) (Max) @ Id	5 V

Part	Vgs (Max)	Vgs(th) (Max) @ Id	Rds On (Max) @ Id, Vgs	Supplier Device Package	Operating Temperature [Min]	Operating Temperature [Max]	Current - Continuous Drain (Id) @ 25°C	Power Dissipation (Max) [Max]	Package / Case	Drive Voltage (Max Rds On, Min Rds On)	FET Type	Input Capacitance (Ciss) (Max) @ Vds [Max]	Technology	Mounting Type	Drain to Source Voltage (Vdss)
IXYS IXFL132N50P3	30 V	5 V	43 mOhm	ISOPLUS264™	-55 °C	150 °C	63 A	520 W	TO-264-3 TO-264AA	10 V	N-Channel	18600 pF	MOSFET (Metal Oxide)	Through Hole	500 V

Prices provided here are for design reference only. For realtime values and availability, please visit the distributors directly

Distributor	Package	Quantity	$

Digikey	Tube	300	$ 20.19

General part information

N-Channel 500 V 63A (Tc) 520W (Tc) Through Hole ISOPLUS264™

Technical documentation and resources

No documents available