Specification	TQM070NB04CR RLG

Current - Continuous Drain (Id) (Ta)	15 A
Current - Continuous Drain (Id) (Tc)	75 A
Drain to Source Voltage (Vdss)	40 V
Drive Voltage (Max Rds On)	7 V
Drive Voltage (Min Rds On)	10 V
FET Type	N-Channel
Gate Charge (Max)	42 nC
Grade	Automotive
Input Capacitance (Ciss) (Max)	3125 pF
Mounting Type	Wettable Flank, Surface Mount
Operating Temperature (Max)	175 °C
Operating Temperature (Min)	-55 °C
Package / Case	8-PowerTDFN
Package Length	5 mm
Package Name	8-PDFNU
Package Width	6 mm
Power Dissipation (Max)	83 W, 3.1 W
Qualification	AEC-Q101
Rds On (Max)	7 mOhm
Technology	MOSFET (Metal Oxide)
Vgs (Max)	20 V
Vgs(th) (Max)	3.8 V

TQM070 Series

Part	Technology	Gate Charge (Max)	Rds On (Max)	Package / Case	Power Dissipation (Max)	Vgs (Max)	Operating Temperature (Min)	Operating Temperature (Max)	Drive Voltage (Min Rds On)	Drive Voltage (Max Rds On)	Current - Continuous Drain (Id) (Tc)	Current - Continuous Drain (Id) (Ta)	Package Length	Package Name	Package Width	Qualification	Vgs(th) (Max)	Input Capacitance (Ciss) (Max)	FET Type	Mounting Type	Drain to Source Voltage (Vdss)	Grade
Taiwan Semiconductor Corporation TQM070NH04LCR RLG	MOSFET (Metal Oxide)	34.5 nC	7 mOhm	8-PowerTDFN	46.8 W	16 V	-55 °C	175 °C	10 V	4.5 V	54 A	16 A	5 mm	8-PDFN	6 mm	AEC-Q101	2.2 V	2169 pF	N-Channel	Surface Mount	40 V	Automotive
Taiwan Semiconductor Corporation TQM070NB04CR RLG	MOSFET (Metal Oxide)	42 nC	7 mOhm	8-PowerTDFN	3.1 W 83 W	20 V	-55 °C	175 °C	10 V	7 V	75 A	15 A	5 mm	8-PDFNU	6 mm	AEC-Q101	3.8 V	3125 pF	N-Channel	Surface Mount Wettable Flank	40 V	Automotive

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