BSS83PL6327HTSA1

Obsolete

Infineon Technologies

MOSFET P-CH 60V 330MA SOT23-3

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Obsolete

Infineon Technologies

MOSFET P-CH 60V 330MA SOT23-3

Technical Specifications

Parameters and characteristics for this part

Specification	BSS83PL6327HTSA1

Current - Continuous Drain (Id) @ 25°C	330 mA
Drain to Source Voltage (Vdss)	60 V
Drive Voltage (Max Rds On, Min Rds On)	10 V, 4.5 V
FET Type	P-Channel
Gate Charge (Qg) (Max) @ Vgs [Max]	3.57 nC
Input Capacitance (Ciss) (Max) @ Vds	78 pF
Mounting Type	Surface Mount
Operating Temperature [Max]	150 °C
Operating Temperature [Min]	-55 °C
Package / Case	SOT-23-3, TO-236-3, SC-59
Power Dissipation (Max)	360 mW
Rds On (Max) @ Id, Vgs	2 Ohm
Supplier Device Package	PG-SOT23
Technology	MOSFET (Metal Oxide)
Vgs (Max)	20 V
Vgs(th) (Max) @ Id	2 V

Part	Vgs(th) (Max) @ Id	Drive Voltage (Max Rds On, Min Rds On)	Package / Case	Rds On (Max) @ Id, Vgs	Vgs (Max)	Technology	Gate Charge (Qg) (Max) @ Vgs [Max]	Drain to Source Voltage (Vdss)	Supplier Device Package	Mounting Type	Power Dissipation (Max)	FET Type	Input Capacitance (Ciss) (Max) @ Vds	Current - Continuous Drain (Id) @ 25°C	Operating Temperature [Min]	Operating Temperature [Max]
Infineon Technologies BSS83PL6327HTSA1	2 V	4.5 V 10 V	SC-59 SOT-23-3 TO-236-3	2 Ohm	20 V	MOSFET (Metal Oxide)	3.57 nC	60 V	PG-SOT23	Surface Mount	360 mW	P-Channel	78 pF	330 mA	-55 °C	150 °C

Prices provided here are for design reference only. For realtime values and availability, please visit the distributors directly

Distributor	Package	Quantity	$

General part information

P-Channel 60 V 330mA (Ta) 360mW (Ta) Surface Mount PG-SOT23

Technical documentation and resources