IXFT80N65X2HV

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LITTELFUSE

DISCMSFT NCHULTRAJNCTN X2CLASS TO-268AA/ TUBE

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IXFT80N65X2HV

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LITTELFUSE

DISCMSFT NCHULTRAJNCTN X2CLASS TO-268AA/ TUBE

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Description Specifications Series Pricing CAD Documents

Description

General part information

IXFT80 Series

Developed using the charge compensation principle and proprietary process technology, these new devices exhibit the lowest on-state resistances, along with low gate charges and superior dv/dt performance. Their avalanche capability also enhances the device ruggedness. In addition, thanks to the fast soft-recovery body diode, the Ultra-Junction MOSFETs help reduce switching losses and electromagnetic interference (EMI). Advantages: Higher efficiency High power density Easy to mount Space savings

Technical Specifications

Parameters and characteristics for this part

Specification	IXFT80N65X2HV

Current - Continuous Drain (Id) (Tc)	80 A
Drain to Source Voltage (Vdss)	650 V
Drive Voltage (Max Rds On, Min Rds On)	10 V
FET Type	N-Channel
Gate Charge (Max)	140 nC
Input Capacitance (Ciss) (Max)	8300 pF
Mounting Type	Surface Mount
Operating Temperature (Max)	150 °C
Operating Temperature (Min)	-55 °C
Package / Case	D3PAK (2 Leads + Tab), TO-268-3, TO-268AA
Package Name	TO-268HV (IXFT)
Power Dissipation (Max)	890 W
Technology	MOSFET (Metal Oxide)
Vgs (Max)	30 V
Vgs(th) (Max)	5 V

IXFT80 Series

Part	Vgs(th) (Max)	Gate Charge (Max)	FET Type	Vgs (Max)	Package / Case	Rds On (Max)	Drain to Source Voltage (Vdss)	Drive Voltage (Max Rds On, Min Rds On)	Power Dissipation (Max)	Operating Temperature (Min)	Operating Temperature (Max)	Current - Continuous Drain (Id) (Tc)	Technology	Input Capacitance (Ciss) (Max)	Package Name	Mounting Type
LITTELFUSE IXFT80N08	4 V	180 nC	N-Channel	20 V	D3PAK (2 Leads + Tab) TO-268-3 TO-268AA	9 mOhm	80 V	10 V	300 W	-55 °C	150 °C	80 A	MOSFET (Metal Oxide)	4800 pF	TO-268AA	Surface Mount
LITTELFUSE IXFT80N65X2HV	5 V	140 nC	N-Channel	30 V	D3PAK (2 Leads + Tab) TO-268-3 TO-268AA		650 V	10 V	890 W	-55 °C	150 °C	80 A	MOSFET (Metal Oxide)	8300 pF	TO-268HV (IXFT)	Surface Mount
LITTELFUSE IXFT80N085	4 V	180 nC	N-Channel	20 V	D3PAK (2 Leads + Tab) TO-268-3 TO-268AA	9 mOhm	85 V	10 V	300 W	-55 °C	150 °C	80 A	MOSFET (Metal Oxide)	4800 pF	TO-268AA	Surface Mount
LITTELFUSE IXFT80N65X2HV	5 V	140 nC	N-Channel	30 V	D3PAK (2 Leads + Tab) TO-268-3 TO-268AA		650 V	10 V	890 W	-55 °C	150 °C	80 A	MOSFET (Metal Oxide)	8300 pF	TO-268HV (IXFT)	Surface Mount
LITTELFUSE IXFT80N15Q	4 V	180 nC	N-Channel	20 V	D3PAK (2 Leads + Tab) TO-268-3 TO-268AA	22.5 mOhm	150 V	10 V	360 W	-55 °C	150 °C	80 A	MOSFET (Metal Oxide)	4500 pF	TO-268AA	Surface Mount
LITTELFUSE IXFT80N10Q	4 V	180 nC	N-Channel	20 V	D3PAK (2 Leads + Tab) TO-268-3 TO-268AA	15 mOhm	100 V	10 V	360 W	-55 °C	150 °C	80 A	MOSFET (Metal Oxide)	4500 pF	TO-268AA	Surface Mount

Pricing

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CAD

3D models and CAD resources for this part

Documents

Technical documentation and resources

Datasheet

Forward-Biased, Reverse-Biased, and Short-Circuit Safe Operating Area of MOSFETs and IGBTs

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