Specification	S8-4150E3/TR7

Current - Average Rectified (Io) (per Diode)	400 mA
Current - Reverse Leakage	100 nA
Diode Configuration	Independent
Diode Count	4
Mounting Type	Surface Mount
Operating Temperature - Junction (Max)	150 °C
Operating Temperature - Junction (Min)	-55 °C
Package Length	0.154 in
Package Name	8-SOIC
Package Width	3.9 mm
Reverse Recovery Time (trr)	4 ns
Speed - Fast Recovery (Maximum)	500 ns
Speed - Fast Recovery (Minimum)	200 mA
Technology	Standard
Voltage - DC Reverse (Vr) (Max)	50 V
Voltage - Forward (Vf) (Max)	1 V

S8-4150 Series

Part	Mounting Type	Operating Temperature - Junction (Max)	Operating Temperature - Junction (Min)	Speed - Fast Recovery (Maximum)	Speed - Fast Recovery (Minimum)	Current - Reverse Leakage	Package Name	Technology	Voltage - Forward (Vf) (Max)	Reverse Recovery Time (trr)	Diode Configuration	Diode Count	Package Length	Package Width	Current - Average Rectified (Io) (per Diode)	Voltage - DC Reverse (Vr) (Max)
Microchip Technology S8-4150E3/TR7	Surface Mount	150 °C	-55 °C	500 ns	200 mA	100 nA	8-SOIC	Standard	1 V	4 ns	Independent	4	0.154 in	3.9 mm	400 mA	50 V
Microchip Technology S8-4150/TR7	Surface Mount	150 °C	-55 °C	500 ns	200 mA	100 nA	8-SOIC	Standard	1 V	4 ns	Independent	4	0.154 in	3.9 mm	400 mA	50 V
Microchip Technology S8-4150E3/TR13	Surface Mount	150 °C	-55 °C	500 ns	200 mA	100 nA	8-SOIC	Standard	1 V	4 ns	Independent	4	0.154 in	3.9 mm	400 mA	50 V
Microchip Technology S8-4150/TR13	Surface Mount	150 °C	-55 °C	500 ns	200 mA	100 nA	8-SOIC	Standard	1 V	4 ns	Independent	4	0.154 in	3.9 mm	400 mA	50 V

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