SIDC26D60C8X1SA1

Active

Infineon Technologies

600 V, 100 A, EMITTER CONTROLLED DIODE 3

Deep-Dive with AI

Search across all available documentation for this part.

DocumentsDatasheet

SIDC26D60C8X1SA1

Active

Infineon Technologies

600 V, 100 A, EMITTER CONTROLLED DIODE 3

Deep-Dive with AI

DocumentsDatasheet

Specifications Pricing Series Description Documents

Technical Specifications

Parameters and characteristics for this part

Specification	SIDC26D60C8X1SA1

Current - Average Rectified (Io)	100 A
Current - Reverse Leakage @ Vr	27 µA
Mounting Type	Surface Mount
Operating Temperature - Junction [Max]	175 ░C
Operating Temperature - Junction [Min]	-40 °C
Package / Case	Die
Speed	Standard Recovery >500ns
Speed	200 mA
Supplier Device Package	Die
Technology	Standard
Voltage - DC Reverse (Vr) (Max) [Max]	600 V
Voltage - Forward (Vf) (Max) @ If	1.9 V

SIDC26D Series

Part	Package / Case	Current - Average Rectified (Io)	Technology	Voltage - DC Reverse (Vr) (Max) [Max]	Current - Reverse Leakage @ Vr	Operating Temperature - Junction [Min]	Operating Temperature - Junction [Max]	Mounting Type	Voltage - Forward (Vf) (Max) @ If	Supplier Device Package	Speed	Speed
Infineon Technologies SIDC26D60C8X1SA1	Die	100 A	Standard	600 V	27 µA	-40 °C	175 ░C	Surface Mount	1.9 V	Die	Standard Recovery >500ns	200 mA

Pricing

Prices provided here are for design reference only. For realtime values and availability, please visit the distributors directly

Distributor	Package	Quantity	$

Description

General part information

SIDC26D Series

Emitter Controlled Diode is Infineon's unique Fast Recovery Diode technology. The ultrathin wafer and Fieldstop technology makes the Emitter Controlled Diode ideally suited for consumer and industry applications as it lowers the turn-on losses of the IGBT with soft recovery. The Emitter Controlled Diode is optimized for Infineon IGBT technology.

Documents

Technical documentation and resources