XP234N08013R-G

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Torex Semiconductor Ltd

MOSFET N-CH 30V 800MA SOT323-3

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Torex Semiconductor Ltd

MOSFET N-CH 30V 800MA SOT323-3

Technical Specifications

Parameters and characteristics for this part

Specification	XP234N08013R-G

Current - Continuous Drain (Id) @ 25°C	800 mA
Drain to Source Voltage (Vdss)	30 V
Drive Voltage (Max Rds On, Min Rds On)	10 V, 4.5 V
FET Type	N-Channel
Gate Charge (Qg) (Max) @ Vgs	1.32 nC
Input Capacitance (Ciss) (Max) @ Vds	64 pF
Mounting Type	Surface Mount
Operating Temperature	150 °C
Package / Case	SC-70, SOT-323
Power Dissipation (Max) [Max]	350 mW
Rds On (Max) @ Id, Vgs	290 mOhm
Supplier Device Package	SOT-323-3A
Technology	MOSFET (Metal Oxide)
Vgs (Max)	20 V
Vgs(th) (Max) @ Id	2.6 V

Part	Drive Voltage (Max Rds On, Min Rds On)	Vgs (Max)	Vgs(th) (Max) @ Id	Power Dissipation (Max) [Max]	Input Capacitance (Ciss) (Max) @ Vds	FET Type	Current - Continuous Drain (Id) @ 25°C	Gate Charge (Qg) (Max) @ Vgs	Rds On (Max) @ Id, Vgs	Mounting Type	Operating Temperature	Technology	Package / Case	Supplier Device Package	Drain to Source Voltage (Vdss)
Torex Semiconductor Ltd XP234N08013R-G	4.5 V 10 V	20 V	2.6 V	350 mW	64 pF	N-Channel	800 mA	1.32 nC	290 mOhm	Surface Mount	150 °C	MOSFET (Metal Oxide)	SC-70 SOT-323	SOT-323-3A	30 V

Prices provided here are for design reference only. For realtime values and availability, please visit the distributors directly

General part information

N-Channel 30 V 800mA (Ta) 350mW (Ta) Surface Mount SOT-323-3A

Technical documentation and resources

No documents available