2SC5065-O(TE85L,F)

Obsolete

Toshiba Semiconductor and Storage

RF TRANS NPN 12V 7GHZ USM

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Obsolete

Toshiba Semiconductor and Storage

RF TRANS NPN 12V 7GHZ USM

Technical Specifications

Parameters and characteristics for this part

Specification	2SC5065-O(TE85L,F)

Current - Collector (Ic) (Max) [Max]	30 mA
DC Current Gain (hFE) (Min) @ Ic, Vce [Min]	80
Frequency - Transition	7 GHz
Mounting Type	Surface Mount
Noise Figure (dB Typ @ f)	1 dB
Operating Temperature	125 ¯C
Package / Case	SC-70, SOT-323
Power - Max [Max]	100 mW
Supplier Device Package	SC-70
Transistor Type	NPN
Voltage - Collector Emitter Breakdown (Max)	12 V

Part	Current - Collector (Ic) (Max) [Max]	Noise Figure (dB Typ @ f)	Voltage - Collector Emitter Breakdown (Max)	Supplier Device Package	Power - Max [Max]	Frequency - Transition	Transistor Type	Mounting Type	Package / Case	DC Current Gain (hFE) (Min) @ Ic, Vce [Min]	Operating Temperature
Toshiba Semiconductor and Storage 2SC5065-O(TE85L,F)	30 mA	1 dB	12 V	SC-70	100 mW	7 GHz	NPN	Surface Mount	SC-70 SOT-323	80	125 ¯C

Prices provided here are for design reference only. For realtime values and availability, please visit the distributors directly

Distributor	Package	Quantity	$

General part information

RF Transistor NPN 12V 30mA 7GHz 100mW Surface Mount SC-70

Technical documentation and resources

No documents available