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ROHM BR93G86NUX-3TTR

BR93G76NUX-3TTR

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Rohm Semiconductor

EEPROM, 8KBIT, -40 TO 85DEG C ROHS COMPLIANT: YES

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ROHM BR93G86NUX-3TTR

BR93G76NUX-3TTR

Active
Rohm Semiconductor

EEPROM, 8KBIT, -40 TO 85DEG C ROHS COMPLIANT: YES

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Description

General part information

BR93G76 Series

EEPROM Memory IC 8Kbit Microwire 3 MHz VSON008X2030

Technical Specifications

Parameters and characteristics for this part

SpecificationBR93G76NUX-3TTR
Clock Frequency3 MHz
Memory Depth (Option 1)1 K
Memory Depth (Option 2)512
Memory FormatEEPROM
Memory Interface (Type)Microwire
Memory Organization512 x 16, 1K x 8
Memory Size1 KB
Memory TypeNon-Volatile
Memory Width (Option 1)8 bit
Memory Width (Option 2)16 bit
Mounting TypeSurface Mount
Operating Temperature (Max)85 °C
Operating Temperature (Min)-40 °C
Package / Case8-UFDFN Exposed Pad
Package NameVSON008X2030
TechnologyEEPROM
Voltage - Supply (Maximum)5.5 V
Voltage - Supply (Minimum)1.7 V
Write Cycle Time - Page5 ms
Write Cycle Time - Word5 ms

Pricing

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