STFI28N60M2

Obsolete

STMicroelectronics

MOSFET N-CH 600V 22A I2PAKFP

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Obsolete

STMicroelectronics

MOSFET N-CH 600V 22A I2PAKFP

Technical Specifications

Parameters and characteristics for this part

Specification	STFI28N60M2

Current - Continuous Drain (Id) @ 25°C	22 A
Drain to Source Voltage (Vdss)	600 V
Drive Voltage (Max Rds On, Min Rds On)	10 V
FET Type	N-Channel
Gate Charge (Qg) (Max) @ Vgs	36 nC
Input Capacitance (Ciss) (Max) @ Vds [Max]	1440 pF
Mounting Type	Through Hole
Operating Temperature	150 °C
Package / Case	TO-262-3 Full Pack, I2PAK
Rds On (Max) @ Id, Vgs [Max]	150 mOhm
Supplier Device Package	TO-281 (I2PAKFP)
Technology	MOSFET (Metal Oxide)
Vgs (Max)	25 V
Vgs(th) (Max) @ Id	4 V

Part	Gate Charge (Qg) (Max) @ Vgs	Drain to Source Voltage (Vdss)	Drive Voltage (Max Rds On, Min Rds On)	Vgs(th) (Max) @ Id	Supplier Device Package	FET Type	Mounting Type	Input Capacitance (Ciss) (Max) @ Vds [Max]	Vgs (Max)	Rds On (Max) @ Id, Vgs [Max]	Operating Temperature	Package / Case	Current - Continuous Drain (Id) @ 25°C	Technology
STMicroelectronics STFI28N60M2	36 nC	600 V	10 V	4 V	TO-281 (I2PAKFP)	N-Channel	Through Hole	1440 pF	25 V	150 mOhm	150 °C	TO-262-3 Full Pack I2PAK	22 A	MOSFET (Metal Oxide)

Prices provided here are for design reference only. For realtime values and availability, please visit the distributors directly

Distributor	Package	Quantity	$

General part information

N-Channel 600 V 22A (Tc) 30W (Tc) Through Hole TO-281 (I2PAKFP)

Technical documentation and resources