PMBF170,215
ActiveNexperia USA Inc.
N-CHANNEL TRENCHMOS INTERMEDIATE LEVEL FET
PMBF170,215
ActiveNexperia USA Inc.
N-CHANNEL TRENCHMOS INTERMEDIATE LEVEL FET
Description
General part information
PMBF170 Series
N-Channel 60 V 300mA (Ta) 830mW (Tc) Surface Mount TO-236AB
Technical Specifications
Parameters and characteristics for this part
| Specification | PMBF170,215 |
|---|---|
| Current - Continuous Drain (Id) (Ta) | 300 mA |
| Drain to Source Voltage (Vdss) | 60 V |
| Drive Voltage (Max Rds On) | 4.5 V |
| Drive Voltage (Min Rds On) | 10 V |
| FET Type | N-Channel |
| Input Capacitance (Ciss) (Max) | 40 pF |
| Mounting Type | Surface Mount |
| Operating Temperature (Max) | 150 °C |
| Operating Temperature (Min) | -65 °C |
| Package / Case | TO-236-3, SOT-23-3, SC-59 |
| Package Name | TO-236AB |
| Power Dissipation (Max) | 830 mW |
| Rds On (Max) | 5 Ohm |
| Technology | MOSFET (Metal Oxide) |
| Vgs (Max) | 20 V |
| Vgs(th) (Max) | 2 V |
Pricing
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CAD
3D models and CAD resources for this part
Documents
Technical documentation and resources
Datasheet
plastic, surface-mounted package; 3 terminals; 1.9 mm pitch; 2.9 mm x 1.3 mm x 1 mm body
Reel pack for SMD, 7"; Q3/T4 product orientation
Power MOSFET frequently asked questions and answers
RC Thermal Models
Reflow soldering profile
Power MOSFET single-shot and repetitive avalanche ruggedness rating
Understanding power MOSFET data sheet parameters
Understanding power MOSFET data sheet parameters
Using power MOSFETs in parallel
Wave soldering profile
Nexperia package poster
Reel pack for SMD, 11"; Q3/T4 product orientation
Questions about package outline drawings
Failure signature of Electrical Overstress on Power MOSFETs
plastic, surface-mounted package; 3 terminals; 1.9 mm pitch; 2.9 mm x 1.3 mm x 1 mm body
LFPAK MOSFET thermal design guide - Part 2
LFPAK MOSFET thermal design guide, Chinese version