TK34A10N1,S4X

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Toshiba Semiconductor and Storage

MOSFET N-CH 100V 34A TO220SIS

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Toshiba Semiconductor and Storage

MOSFET N-CH 100V 34A TO220SIS

Technical Specifications

Parameters and characteristics for this part

Specification	TK34A10N1,S4X

Current - Continuous Drain (Id) @ 25°C	34 A
Drain to Source Voltage (Vdss)	100 V
Drive Voltage (Max Rds On, Min Rds On)	10 V
FET Type	N-Channel
Gate Charge (Qg) (Max) @ Vgs [Max]	38 nC
Input Capacitance (Ciss) (Max) @ Vds	2600 pF
Mounting Type	Through Hole
Operating Temperature	150 °C
Package / Case	TO-220-3 Full Pack
Power Dissipation (Max) [Max]	35 W
Rds On (Max) @ Id, Vgs	9.5 mOhm
Supplier Device Package	TO-220SIS
Technology	MOSFET (Metal Oxide)
Vgs (Max)	20 V
Vgs(th) (Max) @ Id	4 V

Part	Rds On (Max) @ Id, Vgs	FET Type	Drain to Source Voltage (Vdss)	Supplier Device Package	Current - Continuous Drain (Id) @ 25°C	Vgs(th) (Max) @ Id	Power Dissipation (Max) [Max]	Operating Temperature	Mounting Type	Vgs (Max)	Input Capacitance (Ciss) (Max) @ Vds	Technology	Package / Case	Drive Voltage (Max Rds On, Min Rds On)	Gate Charge (Qg) (Max) @ Vgs [Max]
Toshiba Semiconductor and Storage TK34A10N1,S4X	9.5 mOhm	N-Channel	100 V	TO-220SIS	34 A	4 V	35 W	150 °C	Through Hole	20 V	2600 pF	MOSFET (Metal Oxide)	TO-220-3 Full Pack	10 V	38 nC

Prices provided here are for design reference only. For realtime values and availability, please visit the distributors directly

Distributor	Package	Quantity	$

Digikey	Tube	50	$ 1.08

General part information

N-Channel 100 V 34A (Tc) 35W (Tc) Through Hole TO-220SIS

Technical documentation and resources