IPC045N10N3X1SA1
NRNDOPTIMOS™ AND STRONGIRFET™ LOW AND MEDIUM VOLTAGE POWER MOSFET BARE DIES
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IPC045N10N3X1SA1
NRNDOPTIMOS™ AND STRONGIRFET™ LOW AND MEDIUM VOLTAGE POWER MOSFET BARE DIES
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Technical Specifications
Parameters and characteristics for this part
| Specification | IPC045N10N3X1SA1 |
|---|---|
| Current - Continuous Drain (Id) @ 25°C | 1 A |
| Drain to Source Voltage (Vdss) | 100 V |
| Drive Voltage (Max Rds On, Min Rds On) | 10 V |
| FET Type | N-Channel |
| Mounting Type | Surface Mount |
| Package / Case | Die |
| Supplier Device Package | Sawn on foil |
| Technology | MOSFET (Metal Oxide) |
| Vgs(th) (Max) @ Id | 3.5 V |
Pricing
Prices provided here are for design reference only. For realtime values and availability, please visit the distributors directly
| Distributor | Package | Quantity | $ | |
|---|---|---|---|---|
| Digikey | Bulk | 31190 | $ 0.44 | |
Description
General part information
IPC045N Series
Infineon’s OptiMOS™ 100V, 120V and 150V families combine very low on-state resistance (RDS(on)) and fastest switching behavior, providing outstanding performance to a wide range of industrial and consumer applications. From high current motor control applications to fast switching DC-DC converters or Class D audio amplifiers, Infineon’s products offer excellent performance, the highest efficiency and minimal space requirements.
Documents
Technical documentation and resources