SMBT3904E6327HTSA1

Infineon Technologies

BIPOLAR (BJT) SINGLE TRANSISTOR, NPN, 40 V, 200 MA, 330 MW, SOT-23, SURFACE MOUNT

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Infineon Technologies

BIPOLAR (BJT) SINGLE TRANSISTOR, NPN, 40 V, 200 MA, 330 MW, SOT-23, SURFACE MOUNT

Technical Specifications

Parameters and characteristics for this part

Specification	SMBT3904E6327HTSA1

Current - Collector (Ic) (Max) [Max]	200 mA
Current - Collector Cutoff (Max) [Max]	50 nA
DC Current Gain (hFE) (Min) @ Ic, Vce [Min]	100
Frequency - Transition	300 MHz
Mounting Type	Surface Mount
Operating Temperature	150 °C
Package / Case	SOT-23-3, TO-236-3, SC-59
Power - Max [Max]	330 mW
Supplier Device Package	PG-SOT23
Transistor Type	NPN
Vce Saturation (Max) @ Ib, Ic	300 mV
Voltage - Collector Emitter Breakdown (Max) [Max]	40 V

Part	Supplier Device Package	Current - Collector Cutoff (Max) [Max]	Transistor Type	Vce Saturation (Max) @ Ib, Ic	Frequency - Transition	Current - Collector (Ic) (Max) [Max]	DC Current Gain (hFE) (Min) @ Ic, Vce [Min]	Voltage - Collector Emitter Breakdown (Max) [Max]	Package / Case	Operating Temperature	Mounting Type	Power - Max [Max]
Infineon Technologies SMBT3904E6327HTSA1	PG-SOT23	50 nA	NPN	300 mV	300 MHz	200 mA	100	40 V	SC-59 SOT-23-3 TO-236-3	150 °C	Surface Mount	330 mW

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General part information

The SMBT 3904 E6327 is a NPN silicon switching Bipolar Transistor with low collector-emitter saturation voltage.

Technical documentation and resources