STW48N60DM2
ActiveN-CHANNEL 600 V, 0.065 OHM TYP., 40 A MDMESH DM2 POWER MOSFET IN A TO-247 PACKAGE
STW48N60DM2
ActiveN-CHANNEL 600 V, 0.065 OHM TYP., 40 A MDMESH DM2 POWER MOSFET IN A TO-247 PACKAGE
Description
General part information
STW48N60DM2 Series
This high voltage N-channel Power MOSFET is part of the MDmesh™ DM2 fast recovery diode series. It offers very low recovery charge (Qrr) and time (trr) combined with low RDS(on), rendering it suitable for the most demanding high efficiency converters and ideal for bridge topologies and ZVS phase-shift converters.
Technical Specifications
Parameters and characteristics for this part
| Specification | STW48N60DM2 |
|---|---|
| Current - Continuous Drain (Id) (Tc) | 40 A |
| Drain to Source Voltage (Vdss) | 600 V |
| Drive Voltage (Max Rds On, Min Rds On) | 10 V |
| FET Type | N-Channel |
| Gate Charge (Max) | 70 nC |
| Input Capacitance (Ciss) (Max) | 3250 pF |
| Mounting Type | Through Hole |
| Operating Temperature (Max) | 150 °C |
| Operating Temperature (Min) | -55 °C |
| Package / Case | TO-247-3 |
| Package Name | TO-247-3 |
| Power Dissipation (Max) | 300 W |
| Rds On (Max) | 79 mOhm |
| Technology | MOSFET (Metal Oxide) |
| Vgs (Max) | 25 V |
| Vgs(th) (Max) | 5 V |
Pricing
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