BYQ60W-600PT2Q

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WeEn Semiconductors Co., Ltd

DIODE GEN PURP 600V 60A TO247-2

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WeEn Semiconductors Co., Ltd

DIODE GEN PURP 600V 60A TO247-2

Technical Specifications

Parameters and characteristics for this part

Specification	BYQ60W-600PT2Q

Current - Average Rectified (Io)	60 A
Current - Reverse Leakage @ Vr	10 µA
Mounting Type	Through Hole
Operating Temperature - Junction	175 °C
Package / Case	TO-247-2
Reverse Recovery Time (trr)	55 ns
Speed	200 mA, 500 ns
Supplier Device Package	TO-247-2
Technology	Standard
Voltage - DC Reverse (Vr) (Max) [Max]	600 V
Voltage - Forward (Vf) (Max) @ If	2 V

Part	Operating Temperature - Junction	Reverse Recovery Time (trr)	Supplier Device Package	Speed	Voltage - Forward (Vf) (Max) @ If	Package / Case	Technology	Mounting Type	Voltage - DC Reverse (Vr) (Max) [Max]	Current - Reverse Leakage @ Vr	Current - Average Rectified (Io)
WeEn Semiconductors Co., Ltd BYQ60W-600PT2Q	175 °C	55 ns	TO-247-2	200 mA 500 ns	2 V	TO-247-2	Standard	Through Hole	600 V	10 µA	60 A

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General part information

Diode 600 V 60A Through Hole TO-247-2

Technical documentation and resources

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