R6004JNJGTL

Active

Rohm Semiconductor

600V 4A TO-263, PRESTOMOS™ WITH INTEGRATED HIGH-SPEED DIODE

R6004JNJGTL

Active

Rohm Semiconductor

600V 4A TO-263, PRESTOMOS™ WITH INTEGRATED HIGH-SPEED DIODE

Description Specifications Series Pricing CAD Documents

Description

General part information

R6004 Series

R6004JND3 is a power MOSFET with fast reverse recovery time (trr), suitable for the switching applications.PrestoMOS™ series, R60xxJNx series increases design flexibility while maintaining the industry’s fastest reverse recovery time (trr) optimized for EV charging stations and motor drive in home appliances such as refrigerators and Air Conditioners (ACs).

Technical Specifications

Parameters and characteristics for this part

Specification	R6004JNJGTL

Current - Continuous Drain (Id) (Tc)	4 A
Drain to Source Voltage (Vdss)	600 V
Drive Voltage (Max Rds On, Min Rds On)	15 V
FET Type	N-Channel
Gate Charge (Max)	10.5 nC
Input Capacitance (Ciss) (Max)	260 pF
Mounting Type	Surface Mount
Operating Temperature (Max)	150 °C
Operating Temperature (Min)	-55 °C
Package / Case	D2PAK (2 Leads + Tab), TO-263-3, TO-263AB
Package Name	LPTS
Power Dissipation (Max)	60 W
Rds On (Max)	1.43 Ohm
Technology	MOSFET (Metal Oxide)
Vgs (Max)	30 V
Vgs(th) (Max)	7 V

R6004 Series

600V 4A, TO-252 (DPAK), PrestoMOS™ with integrated high-speed diode

Part	Operating Temperature	Input Capacitance (Ciss) (Max)	Drive Voltage (Max Rds On, Min Rds On)	Mounting Type	Vgs (Max)	FET Type	Vgs(th) (Max)	Current - Continuous Drain (Id) (Tc)	Package / Case	Gate Charge (Max)	Drain to Source Voltage (Vdss)	Technology	Package Name	Rds On (Max)	Power Dissipation (Max)	Current - Continuous Drain (Id) (Ta)	Operating Temperature (Min)	Operating Temperature (Max)
Rohm Semiconductor R6004RND3TL1	150 °C	230 pF	15 V	Surface Mount	30 V	N-Channel	7 V	4 A	DPAK (2 Leads + Tab) SC-63 TO-252-3	10.5 nC	600 V	MOSFET (Metal Oxide)	TO-252	1.73 Ohm	60 W
Rohm Semiconductor R6004CNDTL	150 °C	280 pF	10 V	Surface Mount	25 V	N-Channel	4.5 V		DPAK (2 Leads + Tab) SC-63 TO-252-3	11 nC	600 V	MOSFET (Metal Oxide)	CPT3	1.8 Ohm	40 W	4 A
Rohm Semiconductor R6004KNX		280 pF	10 V	Through Hole	20 V	N-Channel	5 V	4 A	TO-220-3 Full Pack	10.2 nC	600 V	MOSFET (Metal Oxide)	TO-220FM	980 mOhm	40 W		-55 °C	150 °C
Rohm Semiconductor R6004JND3TL1	150 °C	260 pF	15 V	Surface Mount	30 V	N-Channel	7 V	4 A	DPAK (2 Leads + Tab) SC-63 TO-252-3	10.5 nC	600 V	MOSFET (Metal Oxide)	TO-252	1.43 Ohm	60 W
Rohm Semiconductor R6004ENDTL	150 °C	250 pF	10 V	Surface Mount	20 V	N-Channel	4 V	4 A	DPAK (2 Leads + Tab) SC-63 TO-252-3	15 nC	600 V	MOSFET (Metal Oxide)	CPT3	980 mOhm	20 W
Rohm Semiconductor R6004JNJGTL		260 pF	15 V	Surface Mount	30 V	N-Channel	7 V	4 A	D2PAK (2 Leads + Tab) TO-263-3 TO-263AB	10.5 nC	600 V	MOSFET (Metal Oxide)	LPTS	1.43 Ohm	60 W		-55 °C	150 °C
Rohm Semiconductor R6004ENX	150 °C	250 pF	10 V	Through Hole	20 V	N-Channel	4 V	4 A	TO-220-3 Full Pack	15 nC	600 V	MOSFET (Metal Oxide)	TO-220FM	980 mOhm	40 W