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STW10NK60Z - ONSEMI HUF75652G3

STW10NK60Z

Active
STMicroelectronics

N-CHANNEL 600 V, 0.65 OHM TYP., 10 A ZENER-PROTECTED SUPERMESH POWER MOSFET IN TO-247 PACKAGE

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DocumentsDatasheet+18
STW10NK60Z - ONSEMI HUF75652G3

STW10NK60Z

Active
STMicroelectronics

N-CHANNEL 600 V, 0.65 OHM TYP., 10 A ZENER-PROTECTED SUPERMESH POWER MOSFET IN TO-247 PACKAGE

Deep-Dive with AI

DocumentsDatasheet+18

Technical Specifications

Parameters and characteristics for this part

SpecificationSTW10NK60Z
Current - Continuous Drain (Id) @ 25°C10 A
Drain to Source Voltage (Vdss)600 V
Drive Voltage (Max Rds On, Min Rds On)10 V
FET TypeN-Channel
Gate Charge (Qg) (Max) @ Vgs [Max]70 nC
Input Capacitance (Ciss) (Max) @ Vds1370 pF
Mounting TypeThrough Hole
Operating Temperature [Max]150 °C
Operating Temperature [Min]-55 °C
Package / CaseTO-247-3
Power Dissipation (Max)156 W
Rds On (Max) @ Id, Vgs750 mOhm
Supplier Device PackageTO-247-3
TechnologyMOSFET (Metal Oxide)
Vgs (Max)30 V
Vgs(th) (Max) @ Id4.5 V

Pricing

Prices provided here are for design reference only. For realtime values and availability, please visit the distributors directly

DistributorPackageQuantity$
DigikeyTube 1$ 4.07
30$ 3.22
120$ 2.76
510$ 2.46
1020$ 2.10
2010$ 1.98
5010$ 1.90
NewarkEach 1$ 4.30
10$ 3.65
120$ 2.95
510$ 2.70
1020$ 2.41
2520$ 2.00

Description

General part information

STW10NK60Z Series

These devices are N-channel Zener-protected Power MOSFET developed using STMicroelectronics' SuperMESH™ technology, achieved through optimization of ST's well-established strip-based PowerMESH™ layout. In addition to a significant reduction in on-resistance, this device is designed to ensure a high level of dv/dt capability for the most demanding applications.