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RN2713JE(TE85L,F) - SOT-553

RN2713JE(TE85L,F)

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Toshiba Semiconductor and Storage

TRANS 2PNP PREBIAS 0.1W ESV

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RN2713JE(TE85L,F) - SOT-553

RN2713JE(TE85L,F)

Active
Toshiba Semiconductor and Storage

TRANS 2PNP PREBIAS 0.1W ESV

Deep-Dive with AI

DocumentsDatasheet

Technical Specifications

Parameters and characteristics for this part

SpecificationRN2713JE(TE85L,F)
Current - Collector (Ic) (Max) [Max]100 mA
Current - Collector Cutoff (Max) [Max]100 nA
DC Current Gain (hFE) (Min) @ Ic, Vce [Min]120
Frequency - Transition200 MHz
Mounting TypeSurface Mount
Package / CaseSOT-553
Power - Max [Max]100 mW
Resistor - Base (R1)47 kOhms
Supplier Device PackageESV
Transistor Type2 PNP - Pre-Biased (Dual) (Emitter Coupled)
Vce Saturation (Max) @ Ib, Ic300 mV
Voltage - Collector Emitter Breakdown (Max) [Max]50 V

Pricing

Prices provided here are for design reference only. For realtime values and availability, please visit the distributors directly

DistributorPackageQuantity$
DigikeyCut Tape (CT) 1$ 0.39
10$ 0.24
100$ 0.15
500$ 0.11
1000$ 0.10
2000$ 0.09
Digi-Reel® 1$ 0.39
10$ 0.24
100$ 0.15
500$ 0.11
1000$ 0.10
2000$ 0.09
Tape & Reel (TR) 4000$ 0.08
8000$ 0.07
12000$ 0.07
20000$ 0.06
28000$ 0.06
40000$ 0.06
100000$ 0.05

Description

General part information

RN2713 Series

Pre-Biased Bipolar Transistor (BJT) 2 PNP - Pre-Biased (Dual) (Emitter Coupled) 50V 100mA 200MHz 100mW Surface Mount ESV

Documents

Technical documentation and resources