TK12A60W,S4VX

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Toshiba Semiconductor and Storage

MOSFET N-CH 600V 11.5A TO220SIS

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Toshiba Semiconductor and Storage

MOSFET N-CH 600V 11.5A TO220SIS

Technical Specifications

Parameters and characteristics for this part

Specification	TK12A60W,S4VX

Current - Continuous Drain (Id) @ 25°C	11.5 A
Drain to Source Voltage (Vdss)	600 V
Drive Voltage (Max Rds On, Min Rds On)	10 V
FET Type	N-Channel
Gate Charge (Qg) (Max) @ Vgs [Max]	25 nC
Input Capacitance (Ciss) (Max) @ Vds	890 pF
Mounting Type	Through Hole
Operating Temperature	150 °C
Package / Case	TO-220-3 Full Pack
Power Dissipation (Max) [Max]	35 W
Rds On (Max) @ Id, Vgs	300 mOhm
Supplier Device Package	TO-220SIS
Technology	MOSFET (Metal Oxide)
Vgs (Max)	30 V
Vgs(th) (Max) @ Id	3.7 V

Part	Package / Case	Input Capacitance (Ciss) (Max) @ Vds	Technology	Operating Temperature	Power Dissipation (Max)	Vgs (Max)	Drive Voltage (Max Rds On, Min Rds On)	Gate Charge (Qg) (Max) @ Vgs [Max]	FET Type	Supplier Device Package	Current - Continuous Drain (Id) @ 25°C	Rds On (Max) @ Id, Vgs	Drain to Source Voltage (Vdss)	Mounting Type	Vgs(th) (Max) @ Id	Power Dissipation (Max) [Max]
Toshiba Semiconductor and Storage TK12A60D(STA4,Q,M)	TO-220-3 Full Pack	1800 pF	MOSFET (Metal Oxide)	150 °C	45 W	30 V	10 V	38 nC	N-Channel	TO-220SIS	12 A	550 mOhm	600 V	Through Hole
Toshiba Semiconductor and Storage TK12A60W,S4VX	TO-220-3 Full Pack	890 pF	MOSFET (Metal Oxide)	150 °C		30 V	10 V	25 nC	N-Channel	TO-220SIS	11.5 A	300 mOhm	600 V	Through Hole	3.7 V	35 W

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General part information

N-Channel 600 V 11.5A (Ta) 35W (Tc) Through Hole TO-220SIS

Technical documentation and resources