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STB35N65DM2 - TN4050HP-12G2YTR

STB35N65DM2

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STMicroelectronics

N-CHANNEL 650 V, 93 MOHM TYP., 32 A MDMESH DM2 POWER MOSFET IN A D2PAK PACKAGE

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STB35N65DM2 - TN4050HP-12G2YTR

STB35N65DM2

Active
STMicroelectronics

N-CHANNEL 650 V, 93 MOHM TYP., 32 A MDMESH DM2 POWER MOSFET IN A D2PAK PACKAGE

Deep-Dive with AI

Technical Specifications

Parameters and characteristics for this part

SpecificationSTB35N65DM2
Current - Continuous Drain (Id) @ 25°C28 A
Drain to Source Voltage (Vdss)650 V
Drive Voltage (Max Rds On, Min Rds On)10 V
FET TypeN-Channel
Gate Charge (Qg) (Max) @ Vgs54 nC
Input Capacitance (Ciss) (Max) @ Vds [Max]2400 pF
Mounting TypeSurface Mount
Operating Temperature [Max]150 °C
Operating Temperature [Min]-55 °C
Package / CaseD2PAK (2 Leads + Tab), TO-263AB, TO-263-3
Power Dissipation (Max)210 W
Rds On (Max) @ Id, Vgs110 mOhm
Supplier Device PackageD2PAK
TechnologyMOSFET (Metal Oxide)
Vgs (Max)25 V
Vgs(th) (Max) @ Id5 V

Pricing

Prices provided here are for design reference only. For realtime values and availability, please visit the distributors directly

DistributorPackageQuantity$
DigikeyCut Tape (CT) 1$ 5.97
10$ 4.00
100$ 2.88
500$ 2.40
Digi-Reel® 1$ 5.97
10$ 4.00
100$ 2.88
500$ 2.40
Tape & Reel (TR) 1000$ 2.30
LCSCPiece 1$ 2.52
10$ 2.39
30$ 2.31
100$ 2.23
500$ 2.19
1000$ 2.18
NewarkEach (Supplied on Cut Tape) 1$ 6.17
10$ 4.25
25$ 4.23
50$ 3.98
100$ 3.72
250$ 3.71
500$ 3.51
1000$ 3.48

Description

General part information

STB35N65DM2 Series

This high-voltage N-channel Power MOSFET is part of the MDmesh DM2 fast-recovery diode series. It offers very low recovery charge (Qrr) and time (trr) combined with low RDS(on), rendering it suitable for the most demanding high-efficiency converters and ideal for bridge topologies and ZVS phase-shift converters.