SCT3080AW7TL

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Rohm Semiconductor

SILICON CARBIDE MOSFET, SINGLE, N CHANNEL, 29 A, 650 V, 0.08 OHM, TO-263 (D2PAK)

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SCT3080AW7TL

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Rohm Semiconductor

SILICON CARBIDE MOSFET, SINGLE, N CHANNEL, 29 A, 650 V, 0.08 OHM, TO-263 (D2PAK)

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Description Specifications Series Pricing CAD Documents

Description

General part information

SCT3080 Series

SCT3080KR is anSiC MOSFETfeaturing a trench gate structure optimized for server power supplies, solar power inverters, andEV charging stationsrequiring high efficiency. A new 4-pin package is used that separates the power and driver source terminals, making it possible to maximize high-speed switching performance. This improves turn ON loss in particular, and as a result the total turn ON and turn OFF losses can be reduced by as much as 35% compared with the conventional 3-pin package (TO-247N).A pioneer and industry leader in SiC technology, ROHM was the first supplier to mass produce trench-type MOSFETs that further improve efficiency while reducing power consumption over existing SiC MOSFETs.

Technical Specifications

Parameters and characteristics for this part

Specification	SCT3080AW7TL

Current - Continuous Drain (Id) (Tc)	29 A
Drain to Source Voltage (Vdss)	650 V
FET Type	N-Channel
Gate Charge (Max)	48 nC
Input Capacitance (Ciss) (Max)	571 pF
Mounting Type	Surface Mount
Operating Temperature	175 °C
Package Leads	7 Leads
Package Name	TO-263-7, D2PAK
Power Dissipation (Max)	125 W
Rds On (Max)	104 mOhm
Technology	SiCFET (Silicon Carbide)
Vgs (Max) Negative	-4 V
Vgs (Max) Positive	22 V
Vgs(th) (Max)	5.6 V

SCT3080 Series

650V, 30A, 4-pin THD, Trench-structure, Silicon-carbide (SiC) MOSFET for Automotive

Part	Vgs(th) (Max)	Technology	Package Name	Package Leads	Mounting Type	Rds On (Max)	Current - Continuous Drain (Id) (Tc)	Power Dissipation (Max)	Operating Temperature	Drain to Source Voltage (Vdss)	Gate Charge (Max)	Input Capacitance (Ciss) (Max)	FET Type	Vgs (Max) Positive	Vgs (Max) Negative	Package / Case	Drive Voltage (Max Rds On, Min Rds On)	Current - Continuous Drain (Id) (Tj)	Grade	Qualification
Rohm Semiconductor SCT3080AW7TL	5.6 V	SiCFET (Silicon Carbide)	D2PAK TO-263-7	7 Leads	Surface Mount	104 mOhm	29 A	125 W	175 °C	650 V	48 nC	571 pF	N-Channel	22 V	-4 V
Rohm Semiconductor SCT3080KRC14	5.6 V	SiCFET (Silicon Carbide)	TO-247-4L		Through Hole	104 mOhm	31 A	165 W	175 °C	1200 V	60 nC	785 pF	N-Channel	22 V	-4 V	TO-247-4	18 V
Rohm Semiconductor SCT3080ARC15	5.6 V	SiC (Silicon Carbide Junction Transistor) SiCFET (Silicon Carbide)	TO-247-4L		Through Hole	104 mOhm		134 W	175 °C	650 V	48 nC	571 pF	N-Channel	22 V	-4 V	TO-247-4	18 V	30 A
Rohm Semiconductor SCT3080ARC14	5.6 V	SiCFET (Silicon Carbide)	TO-247-4L		Through Hole	104 mOhm	30 A	134 W	175 °C	650 V	48 nC	571 pF	N-Channel	22 V	-4 V	TO-247-4	18 V
Rohm Semiconductor SCT3080ALGC11	5.6 V	SiCFET (Silicon Carbide)	TO-247N		Through Hole	104 mOhm	30 A	134 W	175 °C	650 V	48 nC	571 pF	N-Channel	22 V	-4 V	TO-247-3	18 V
Rohm Semiconductor SCT3080KW7TL	5.6 V	SiCFET (Silicon Carbide)	D2PAK TO-263-7	7 Leads	Surface Mount	104 mOhm	30 A	159 W	175 °C	1200 V	60 nC	785 pF	N-Channel	22 V	-4 V
Rohm Semiconductor SCT3080ARHRC15	5.6 V	MOSFET (Metal Oxide)	TO-247-4L		Through Hole	104 mOhm	30 A	134 W	175 °C	650 V	48 nC	571 pF	N-Channel	22 V	-4 V	TO-247-4	18 V		Automotive	AEC-Q101
Rohm Semiconductor SCT3080KRHRC15	5.6 V	MOSFET (Metal Oxide) SiCFET (Silicon Carbide)	TO-247-4L		Through Hole	104 mOhm	31 A	165 W	175 °C	1200 V	60 nC	785 pF	N-Channel	22 V	-4 V	TO-247-4	18 V		Automotive	AEC-Q101
Rohm Semiconductor SCT3080KRC15	5.6 V	SiC (Silicon Carbide Junction Transistor) SiCFET (Silicon Carbide)	TO-247-4L		Through Hole	104 mOhm		165 W	175 °C	1200 V	60 nC	785 pF	N-Channel	22 V	-4 V	TO-247-4	18 V	31 A