IRLR8729TRPBF

Obsolete

Infineon Technologies

STRONGIRFET™ N-CHANNEL MOSFET ; DPAK TO-252 PACKAGE; 8.9 MOHM;

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Obsolete

Infineon Technologies

STRONGIRFET™ N-CHANNEL MOSFET ; DPAK TO-252 PACKAGE; 8.9 MOHM;

Technical Specifications

Parameters and characteristics for this part

Specification	IRLR8729TRPBF

Current - Continuous Drain (Id) @ 25°C	58 A
Drain to Source Voltage (Vdss)	30 V
Drive Voltage (Max Rds On, Min Rds On)	10 V, 4.5 V
FET Type	N-Channel
Gate Charge (Qg) (Max) @ Vgs [Max]	16 nC
Input Capacitance (Ciss) (Max) @ Vds	1350 pF
Mounting Type	Surface Mount
Operating Temperature [Max]	175 ░C
Operating Temperature [Min]	-55 °C
Package / Case	SC-63, DPAK (2 Leads + Tab), TO-252-3
Power Dissipation (Max) [Max]	55 W
Rds On (Max) @ Id, Vgs	8.9 mOhm
Supplier Device Package	TO-252AA (DPAK)
Technology	MOSFET (Metal Oxide)
Vgs (Max)	20 V
Vgs(th) (Max) @ Id	2.35 V

Part	Rds On (Max) @ Id, Vgs	Vgs(th) (Max) @ Id	FET Type	Technology	Vgs (Max)	Current - Continuous Drain (Id) @ 25°C	Mounting Type	Gate Charge (Qg) (Max) @ Vgs [Max]	Power Dissipation (Max) [Max]	Package / Case	Input Capacitance (Ciss) (Max) @ Vds	Supplier Device Package	Drive Voltage (Max Rds On, Min Rds On)	Operating Temperature [Min]	Operating Temperature [Max]	Drain to Source Voltage (Vdss)
Infineon Technologies IRLR8729TRPBF	8.9 mOhm	2.35 V	N-Channel	MOSFET (Metal Oxide)	20 V	58 A	Surface Mount	16 nC	55 W	DPAK (2 Leads + Tab) SC-63 TO-252-3	1350 pF	TO-252AA (DPAK)	4.5 V 10 V	-55 °C	175 ░C	30 V

Prices provided here are for design reference only. For realtime values and availability, please visit the distributors directly

Distributor	Package	Quantity	$

General part information

N-Channel 30 V 58A (Tc) 55W (Tc) Surface Mount TO-252AA (DPAK)

Technical documentation and resources